High-speed carrier-depletion silicon Mach-Zehnder optical modulators with lateral PN junctions

High-speed carrier-depletion silicon Mach-Zehnder optical modulators with lateral PN junctions

This paper presents new experimental data from a lateral PN junction silicon Mach-Zehnder optical modulator. Efficiencies in the 1.4V.cm to 1.9V.cm range are demonstrated for drive voltages between 0V and 6V. High speed operation up to 52Gbit/s is also presented. The performance of the device which...

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Bibliographic Details
Main Authors: Graham Trevor Reed, David John Thomson, Frederic Yannick Gardes, Youfang eHu, Jean-Marc eFedeli, Goran eMashanovich
Format: Article
Language:English
Published: Frontiers Media S.A. 2014-12-01
Series:Frontiers in Physics
Subjects:
silicon photonics
electro-optic modulator
Mach-Zehnder
52Gb/s
carrier depletion.
Online Access:http://journal.frontiersin.org/Journal/10.3389/fphy.2014.00077/full

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