A Novel Hybrid Nano Scale MOSFET Structure for Low Leak Application
In this paper, novel hybrid MOSFET(HMOS) structure has been proposed to reduce the gate leakage current drastically. This novel hybrid MOSFET (HMOS) uses source/drain-to-gate non-overlap region in combination with high-K layer/interfacial oxide as gate stack. The extended S/D in the non-overlap regi...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Iran University of Science and Technology
2011-06-01
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| Series: | Iranian Journal of Electrical and Electronic Engineering |
| Subjects: | |
| Online Access: | http://ijeee.iust.ac.ir/browse.php?a_code=A-10-411-1&slc_lang=en&sid=1 |