To the Theory of Dimensional Quantization in Narrow-Gap Crystals

This article discusses studies of size quantization phenomena in zero-, one-, and two-dimensional semiconductor structures. The main attention is paid to the mechanisms of photon-kinetic effects in these structures. Despite many studies of the physical properties of low-dimensional systems of curre...

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Main Authors: Sharifa B. Utamuradova, Rustam Y. Rasulov, Voxob R. Rasulov, Kamolakhon K. Urinova, Kakhramon M. Fayzullaev
Format: Article
Language:English
Published: V.N. Karazin Kharkiv National University Publishing 2023-12-01
Series:East European Journal of Physics
Subjects:
Online Access:https://periodicals.karazin.ua/eejp/article/view/22614
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author Sharifa B. Utamuradova
Rustam Y. Rasulov
Voxob R. Rasulov
Kamolakhon K. Urinova
Kakhramon M. Fayzullaev
author_facet Sharifa B. Utamuradova
Rustam Y. Rasulov
Voxob R. Rasulov
Kamolakhon K. Urinova
Kakhramon M. Fayzullaev
author_sort Sharifa B. Utamuradova
collection DOAJ
description This article discusses studies of size quantization phenomena in zero-, one-, and two-dimensional semiconductor structures. The main attention is paid to the mechanisms of photon-kinetic effects in these structures. Despite many studies of the physical properties of low-dimensional systems of current carriers, the size quantization of energy spectra in narrow-gap semiconductors and the associated photonic-kinetic effects are still insufficiently studied. Therefore, this study focuses on the quantum mechanical study of size quantization in certain cases using Kane's multiband model. The insolvability of the 8×8 matrix Schrödinger equation in the Kane model for a potential well of arbitrary shape is analyzed. The dependence of the energy spectrum on the two-dimensional wave vector is studied for various cases. In particular, the energy spectra for InSb and GaAs semiconductors are considered, depending on the band parameters and the size of the potential well. Conclusions are presented on the analysis of various cases of size quantization in narrow-gap crystals with cubic or tetrahedral symmetry in the three-band approximation. It is shown that the energy spectrum corresponds to a set of size-quantized levels that depend on the Rabi parameter, band gap, and well size. The size-quantized energy spectra of electrons and holes in InSb and GaAs semiconductors are analyzed in a multiband model.
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spelling doaj.art-3d363ea03c1c424982a7221eec099ef72023-12-02T13:52:14ZengV.N. Karazin Kharkiv National University PublishingEast European Journal of Physics2312-43342312-45392023-12-01410.26565/2312-4334-2023-4-40To the Theory of Dimensional Quantization in Narrow-Gap CrystalsSharifa B. Utamuradova0Rustam Y. Rasulov1Voxob R. Rasulov2Kamolakhon K. Urinova3Kakhramon M. Fayzullaev4Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, UzbekistanFergana State University, Fergana, UzbekistanFergana State University, Fergana, UzbekistanFergana State University, Fergana, UzbekistanInstitute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan This article discusses studies of size quantization phenomena in zero-, one-, and two-dimensional semiconductor structures. The main attention is paid to the mechanisms of photon-kinetic effects in these structures. Despite many studies of the physical properties of low-dimensional systems of current carriers, the size quantization of energy spectra in narrow-gap semiconductors and the associated photonic-kinetic effects are still insufficiently studied. Therefore, this study focuses on the quantum mechanical study of size quantization in certain cases using Kane's multiband model. The insolvability of the 8×8 matrix Schrödinger equation in the Kane model for a potential well of arbitrary shape is analyzed. The dependence of the energy spectrum on the two-dimensional wave vector is studied for various cases. In particular, the energy spectra for InSb and GaAs semiconductors are considered, depending on the band parameters and the size of the potential well. Conclusions are presented on the analysis of various cases of size quantization in narrow-gap crystals with cubic or tetrahedral symmetry in the three-band approximation. It is shown that the energy spectrum corresponds to a set of size-quantized levels that depend on the Rabi parameter, band gap, and well size. The size-quantized energy spectra of electrons and holes in InSb and GaAs semiconductors are analyzed in a multiband model. https://periodicals.karazin.ua/eejp/article/view/22614Dimensional quantizationNarrow-GapCrystalKane modelSchrödinger equationElectron
spellingShingle Sharifa B. Utamuradova
Rustam Y. Rasulov
Voxob R. Rasulov
Kamolakhon K. Urinova
Kakhramon M. Fayzullaev
To the Theory of Dimensional Quantization in Narrow-Gap Crystals
East European Journal of Physics
Dimensional quantization
Narrow-Gap
Crystal
Kane model
Schrödinger equation
Electron
title To the Theory of Dimensional Quantization in Narrow-Gap Crystals
title_full To the Theory of Dimensional Quantization in Narrow-Gap Crystals
title_fullStr To the Theory of Dimensional Quantization in Narrow-Gap Crystals
title_full_unstemmed To the Theory of Dimensional Quantization in Narrow-Gap Crystals
title_short To the Theory of Dimensional Quantization in Narrow-Gap Crystals
title_sort to the theory of dimensional quantization in narrow gap crystals
topic Dimensional quantization
Narrow-Gap
Crystal
Kane model
Schrödinger equation
Electron
url https://periodicals.karazin.ua/eejp/article/view/22614
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