Vertical Tunnel Junction Embedding a Spin Crossover Molecular Film
Abstract Thin films of a molecular spin crossover (SCO) Iron(II) complex featuring a high transition temperature are grown by sublimation in high vacuum on TSAu and investigated by X‐ray and UV photoelectron spectroscopies. Temperature‐dependent studies demonstrate that the thermally induced spin cr...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2018-12-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.201800204 |
| _version_ | 1827797426507874304 |
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| author | Lorenzo Poggini Mathieu Gonidec Juan H. González‐Estefan Gilles Pecastaings Benoît Gobaut Patrick Rosa |
| author_facet | Lorenzo Poggini Mathieu Gonidec Juan H. González‐Estefan Gilles Pecastaings Benoît Gobaut Patrick Rosa |
| author_sort | Lorenzo Poggini |
| collection | DOAJ |
| description | Abstract Thin films of a molecular spin crossover (SCO) Iron(II) complex featuring a high transition temperature are grown by sublimation in high vacuum on TSAu and investigated by X‐ray and UV photoelectron spectroscopies. Temperature‐dependent studies demonstrate that the thermally induced spin crossover behavior is preserved in thin films. A large‐area ultrathin switchable spin crossover molecular vertical tunnel junction with top electrodes of the liquid eutectic of gallium and indium, for which the spin‐state switching of the films induces a two orders of magnitude change in the tunneling current density flowing through the junction, is reported here. The results on large‐area junctions, rationalized by density functional theory calculations, demonstrate the high potential of SCO‐based switchable molecular junctions as functional devices. |
| first_indexed | 2024-03-11T19:21:57Z |
| format | Article |
| id | doaj.art-3d78b25bbc2e42b9a73e7320f4218897 |
| institution | Directory Open Access Journal |
| issn | 2199-160X |
| language | English |
| last_indexed | 2024-03-11T19:21:57Z |
| publishDate | 2018-12-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj.art-3d78b25bbc2e42b9a73e7320f42188972023-10-07T03:29:12ZengWiley-VCHAdvanced Electronic Materials2199-160X2018-12-01412n/an/a10.1002/aelm.201800204Vertical Tunnel Junction Embedding a Spin Crossover Molecular FilmLorenzo Poggini0Mathieu Gonidec1Juan H. González‐Estefan2Gilles Pecastaings3Benoît Gobaut4Patrick Rosa5CNRS ICMCB UMR 5026 F‐33600 Pessac FranceCNRS ICMCB UMR 5026 F‐33600 Pessac FranceCNRS ICMCB UMR 5026 F‐33600 Pessac FranceUniversité de Bordeaux‐INP, LCPO‐CNRS UMR 5629 F‐33607 Pessac, Cedex FranceSynchrotron SOLEIL L'orme des Merisiers Saint‐Aubin‐BP48 F‐91192 Gif‐sur‐Yvette Cedex FranceCNRS ICMCB UMR 5026 F‐33600 Pessac FranceAbstract Thin films of a molecular spin crossover (SCO) Iron(II) complex featuring a high transition temperature are grown by sublimation in high vacuum on TSAu and investigated by X‐ray and UV photoelectron spectroscopies. Temperature‐dependent studies demonstrate that the thermally induced spin crossover behavior is preserved in thin films. A large‐area ultrathin switchable spin crossover molecular vertical tunnel junction with top electrodes of the liquid eutectic of gallium and indium, for which the spin‐state switching of the films induces a two orders of magnitude change in the tunneling current density flowing through the junction, is reported here. The results on large‐area junctions, rationalized by density functional theory calculations, demonstrate the high potential of SCO‐based switchable molecular junctions as functional devices.https://doi.org/10.1002/aelm.201800204eutectic gallium indium alloy (EGaIn)spin crossover (SCO)thin filmstunnel junctions |
| spellingShingle | Lorenzo Poggini Mathieu Gonidec Juan H. González‐Estefan Gilles Pecastaings Benoît Gobaut Patrick Rosa Vertical Tunnel Junction Embedding a Spin Crossover Molecular Film Advanced Electronic Materials eutectic gallium indium alloy (EGaIn) spin crossover (SCO) thin films tunnel junctions |
| title | Vertical Tunnel Junction Embedding a Spin Crossover Molecular Film |
| title_full | Vertical Tunnel Junction Embedding a Spin Crossover Molecular Film |
| title_fullStr | Vertical Tunnel Junction Embedding a Spin Crossover Molecular Film |
| title_full_unstemmed | Vertical Tunnel Junction Embedding a Spin Crossover Molecular Film |
| title_short | Vertical Tunnel Junction Embedding a Spin Crossover Molecular Film |
| title_sort | vertical tunnel junction embedding a spin crossover molecular film |
| topic | eutectic gallium indium alloy (EGaIn) spin crossover (SCO) thin films tunnel junctions |
| url | https://doi.org/10.1002/aelm.201800204 |
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