Theoretical Investigation of Strain-Adjustable Ge<sub>0.92</sub>Sn<sub>0.08</sub> Light-Emitting Diodes With Giant Magnetostrictive Stressor for Short-Wave Infrared Light Source

Theoretical Investigation of Strain-Adjustable Ge<sub>0.92</sub>Sn<sub>0.08</sub> Light-Emitting Diodes With Giant Magnetostrictive Stressor for Short-Wave Infrared Light Source

A new idea was provided by the group-IV GeSn alloys for short-wave infrared light source compatible with CMOS due to the low cost integrated on the Si platform and can be transformed into direct bandgap alloy. More than 7.1&#x0025; Sn content or strain engineering is used to achieve the direct b...

Full description

Bibliographic Details
Main Authors: Qingfang Zhang, Qianyu Chen, Jitao Zhang, Wenxiang Lu, Pei Zhang, Zirui Qin, Lingzhi Cao, Genquan Han
Format: Article
Language:English
Published: IEEE 2023-01-01
Series:IEEE Photonics Journal
Subjects:
Adjustable tensile strain
GeSn alloys
giant magnetostrictive stressor
LED
Online Access:https://ieeexplore.ieee.org/document/10032716/

Internet

https://ieeexplore.ieee.org/document/10032716/

Similar Items