Protons: Critical Species for Resistive Switching in Interface‐Type Memristors
Abstract Interface‐type (IT) resistive switching (RS) memories are promising for next generation memory and computing technologies owing to the filament‐free switching, high on/off ratio, low power consumption, and low spatial variability. Although the switching mechanisms of memristors have been wi...
| Main Authors: | , , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2023-01-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202200816 |
| _version_ | 1797772513409761280 |
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| author | Sundar Kunwar Chase Bennett Somodi Rebecca A. Lalk Bethany X. Rutherford Zachary Corey Pinku Roy Di Zhang Markus Hellenbrand Ming Xiao Judith L. MacManus‐Driscoll Quanxi Jia Haiyan Wang J. Joshua Yang Wanyi Nie Aiping Chen |
| author_facet | Sundar Kunwar Chase Bennett Somodi Rebecca A. Lalk Bethany X. Rutherford Zachary Corey Pinku Roy Di Zhang Markus Hellenbrand Ming Xiao Judith L. MacManus‐Driscoll Quanxi Jia Haiyan Wang J. Joshua Yang Wanyi Nie Aiping Chen |
| author_sort | Sundar Kunwar |
| collection | DOAJ |
| description | Abstract Interface‐type (IT) resistive switching (RS) memories are promising for next generation memory and computing technologies owing to the filament‐free switching, high on/off ratio, low power consumption, and low spatial variability. Although the switching mechanisms of memristors have been widely studied in filament‐type devices, they are largely unknown in IT memristors. In this work, using the simple Au/Nb:SrTiO3 (Nb:STO) as a model Schottky system, it is identified that protons from moisture are key element in determining the RS characteristics in IT memristors. The Au/Nb:STO devices show typical Schottky interface controlled current–voltage (I–V) curves with a large on/off ratio under ambient conditions. Surprisingly, in a controlled environment without protons/moisture, the large I–V hysteresis collapses with the disappearance of a high resistance state (HRS) and the Schottky barrier. Once the devices are re‐exposed to a humid environment, the typical large I–V hysteresis can be recovered within hours as the HRS and Schottky interface are restored. The RS mechanism in Au/Nb:STO is attributed to the Schottky barrier modulation by a proton assisted electron trapping and detrapping process. This work highlights the important role of protons/moisture in the RS properties of IT memristors and provides fundamental insight for switching mechanisms in metal oxides‐based memory devices. |
| first_indexed | 2024-03-12T21:51:59Z |
| format | Article |
| id | doaj.art-3d9b2711184d4c49929a092594e68df6 |
| institution | Directory Open Access Journal |
| issn | 2199-160X |
| language | English |
| last_indexed | 2024-03-12T21:51:59Z |
| publishDate | 2023-01-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj.art-3d9b2711184d4c49929a092594e68df62023-07-26T01:35:51ZengWiley-VCHAdvanced Electronic Materials2199-160X2023-01-0191n/an/a10.1002/aelm.202200816Protons: Critical Species for Resistive Switching in Interface‐Type MemristorsSundar Kunwar0Chase Bennett Somodi1Rebecca A. Lalk2Bethany X. Rutherford3Zachary Corey4Pinku Roy5Di Zhang6Markus Hellenbrand7Ming Xiao8Judith L. MacManus‐Driscoll9Quanxi Jia10Haiyan Wang11J. Joshua Yang12Wanyi Nie13Aiping Chen14Center for Integrated Nanotechnologies (CINT) Los Alamos National Laboratory Los Alamos NM 87545 USACenter for Integrated Nanotechnologies (CINT) Los Alamos National Laboratory Los Alamos NM 87545 USACenter for Integrated Nanotechnologies (CINT) Los Alamos National Laboratory Los Alamos NM 87545 USACenter for Integrated Nanotechnologies (CINT) Los Alamos National Laboratory Los Alamos NM 87545 USADepartment of Materials Design and Innovation University at Buffalo – The State University of New York Buffalo NY 14260 USADepartment of Materials Design and Innovation University at Buffalo – The State University of New York Buffalo NY 14260 USACenter for Integrated Nanotechnologies (CINT) Los Alamos National Laboratory Los Alamos NM 87545 USADepartment of Materials Science and Metallurgy University of Cambridge 27 Charles Babbage Road Cambridge CB3 0FS UKDepartment of Materials Science and Metallurgy University of Cambridge 27 Charles Babbage Road Cambridge CB3 0FS UKDepartment of Materials Science and Metallurgy University of Cambridge 27 Charles Babbage Road Cambridge CB3 0FS UKDepartment of Materials Design and Innovation University at Buffalo – The State University of New York Buffalo NY 14260 USASchool of Materials Engineering Purdue University West Lafayette IN 47907 USADepartment of Electrical and Computer Engineering University of Southern California Los Angeles CA 90089 USACenter for Integrated Nanotechnologies (CINT) Los Alamos National Laboratory Los Alamos NM 87545 USACenter for Integrated Nanotechnologies (CINT) Los Alamos National Laboratory Los Alamos NM 87545 USAAbstract Interface‐type (IT) resistive switching (RS) memories are promising for next generation memory and computing technologies owing to the filament‐free switching, high on/off ratio, low power consumption, and low spatial variability. Although the switching mechanisms of memristors have been widely studied in filament‐type devices, they are largely unknown in IT memristors. In this work, using the simple Au/Nb:SrTiO3 (Nb:STO) as a model Schottky system, it is identified that protons from moisture are key element in determining the RS characteristics in IT memristors. The Au/Nb:STO devices show typical Schottky interface controlled current–voltage (I–V) curves with a large on/off ratio under ambient conditions. Surprisingly, in a controlled environment without protons/moisture, the large I–V hysteresis collapses with the disappearance of a high resistance state (HRS) and the Schottky barrier. Once the devices are re‐exposed to a humid environment, the typical large I–V hysteresis can be recovered within hours as the HRS and Schottky interface are restored. The RS mechanism in Au/Nb:STO is attributed to the Schottky barrier modulation by a proton assisted electron trapping and detrapping process. This work highlights the important role of protons/moisture in the RS properties of IT memristors and provides fundamental insight for switching mechanisms in metal oxides‐based memory devices.https://doi.org/10.1002/aelm.202200816Au/Nb:STOcharge trapping/detrappinginterface‐type memristorsmoisture effectresistive switching |
| spellingShingle | Sundar Kunwar Chase Bennett Somodi Rebecca A. Lalk Bethany X. Rutherford Zachary Corey Pinku Roy Di Zhang Markus Hellenbrand Ming Xiao Judith L. MacManus‐Driscoll Quanxi Jia Haiyan Wang J. Joshua Yang Wanyi Nie Aiping Chen Protons: Critical Species for Resistive Switching in Interface‐Type Memristors Advanced Electronic Materials Au/Nb:STO charge trapping/detrapping interface‐type memristors moisture effect resistive switching |
| title | Protons: Critical Species for Resistive Switching in Interface‐Type Memristors |
| title_full | Protons: Critical Species for Resistive Switching in Interface‐Type Memristors |
| title_fullStr | Protons: Critical Species for Resistive Switching in Interface‐Type Memristors |
| title_full_unstemmed | Protons: Critical Species for Resistive Switching in Interface‐Type Memristors |
| title_short | Protons: Critical Species for Resistive Switching in Interface‐Type Memristors |
| title_sort | protons critical species for resistive switching in interface type memristors |
| topic | Au/Nb:STO charge trapping/detrapping interface‐type memristors moisture effect resistive switching |
| url | https://doi.org/10.1002/aelm.202200816 |
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