High Responsivity and Ultra-Low Detection Limits in Nonlinear a-Si:H p-i-n Photodiodes Enabled by Photogating
Abstract Photodetectors operating at the wavelength in the visible spectrum are key components in high-performance optoelectronic systems. In this work, massive nonlinearities in amorphous silicon p-i-n photodiodes enabled by the photogating are presented, resulting in responsivities up to 744 mA/W...
Päätekijät: | , , , , |
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Aineistotyyppi: | Artikkeli |
Kieli: | English |
Julkaistu: |
SpringerOpen
2023-07-01
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Sarja: | Photonic Sensors |
Aiheet: | |
Linkit: | https://doi.org/10.1007/s13320-023-0689-6 |