High Responsivity and Ultra-Low Detection Limits in Nonlinear a-Si:H p-i-n Photodiodes Enabled by Photogating

Abstract Photodetectors operating at the wavelength in the visible spectrum are key components in high-performance optoelectronic systems. In this work, massive nonlinearities in amorphous silicon p-i-n photodiodes enabled by the photogating are presented, resulting in responsivities up to 744 mA/W...

Täydet tiedot

Bibliografiset tiedot
Päätekijät: Andreas Bablich, Maurice Müller, Rainer Bornemann, Andreas Nachtigal, Peter Haring Bolívar
Aineistotyyppi: Artikkeli
Kieli:English
Julkaistu: SpringerOpen 2023-07-01
Sarja:Photonic Sensors
Aiheet:
Linkit:https://doi.org/10.1007/s13320-023-0689-6