Tailoring Permanent Charge Carrier Densities in Epitaxial Graphene on SiC by Functionalization with F4‐TCNQ

Tailoring Permanent Charge Carrier Densities in Epitaxial Graphene on SiC by Functionalization with F4‐TCNQ

Abstract The outstanding properties and the potential for large‐scale fabrication open a wide field for electronic applications of epitaxial graphene on silicon carbide substrates. However, reliable doping methods to permanently control and tailor the carrier concentration to the desired value witho...

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Bibliographic Details
Main Authors: Yefei Yin, Atasi Chatterjee, Davood Momeni, Mattias Kruskopf, Martin Götz, Stefan Wundrack, Frank Hohls, Klaus Pierz, Hans W. Schumacher
Format: Article
Language:English
Published: Wiley-VCH 2022-12-01
Series:Advanced Physics Research
Subjects:
epitaxial graphene on SiC
F4‐TCNQ
graphene functionalization
molecular doping
quantum Hall resistance
quantum resistance metrology
Online Access:https://doi.org/10.1002/apxr.202200015

Internet

https://doi.org/10.1002/apxr.202200015

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