Sizing of SRAM Cell with Voltage Biasing Techniques for Reliability Enhancement of Memory and PUF Functions
Static Random Access Memory (SRAM) has recently been developed into a physical unclonable function (PUF) for generating chip-unique signatures for hardware cryptography. The most compelling issue in designing a good SRAM-based PUF (SPUF) is that while maximizing the mismatches between the transistor...
Main Authors: | , , , |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2016-08-01
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Series: | Journal of Low Power Electronics and Applications |
Subjects: | |
Online Access: | http://www.mdpi.com/2079-9268/6/3/16 |