Sizing of SRAM Cell with Voltage Biasing Techniques for Reliability Enhancement of Memory and PUF Functions

Sizing of SRAM Cell with Voltage Biasing Techniques for Reliability Enhancement of Memory and PUF Functions

Static Random Access Memory (SRAM) has recently been developed into a physical unclonable function (PUF) for generating chip-unique signatures for hardware cryptography. The most compelling issue in designing a good SRAM-based PUF (SPUF) is that while maximizing the mismatches between the transistor...

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Bibliographic Details
Main Authors: Chip-Hong Chang, Chao Qun Liu, Le Zhang, Zhi Hui Kong
Format: Article
Language:English
Published: MDPI AG 2016-08-01
Series:Journal of Low Power Electronics and Applications
Subjects:
physical unclonable function (PUF)
hardware security
Static Random Access Memory (SRAM)
process variation
memory failures
Online Access:http://www.mdpi.com/2079-9268/6/3/16

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