An ambipolar transistor based on a monolayer WS2 using lithium ions injection
Ambipolar field-effect transistor (FET) devices based on two-dimensional (2D) materials have been attracted much attention due to potential applications in integrated circuits, flexible electronics and optical sensors. However, it is difficult to tune Fermi level between conduction and valence bands...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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IOP Publishing
2020-01-01
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| Series: | Materials Research Express |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2053-1591/aba395 |
| _version_ | 1827868634205126656 |
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| author | Heshen Wang Qiye Liu Xuemeng Feng Zhan Zhang Kai Wang Zhaojun Liu Jun-Feng Dai |
| author_facet | Heshen Wang Qiye Liu Xuemeng Feng Zhan Zhang Kai Wang Zhaojun Liu Jun-Feng Dai |
| author_sort | Heshen Wang |
| collection | DOAJ |
| description | Ambipolar field-effect transistor (FET) devices based on two-dimensional (2D) materials have been attracted much attention due to potential applications in integrated circuits, flexible electronics and optical sensors. However, it is difficult to tune Fermi level between conduction and valence bands using a traditional SiO _2 as dielectric layer. Here, we employed the lithium-ion conductive glass ceramic (LICGC) as the back-gate electrode in a monolayer WS _2 FET. The effective accumulation and dissipation of Li ^+ ions in the interface induce a wide tune of Fermi level in the conducting channel by electron and hole doping, which show an ambipolar transport characteristics with threshold voltages at 0.9 V and −1.3 V, respectively. Our results provide an opportunity for fabricating ultra-thin ambipolar FET based on 2D materials. |
| first_indexed | 2024-03-12T15:34:15Z |
| format | Article |
| id | doaj.art-3e2cf3049c8d4da39d2960573eab8fcc |
| institution | Directory Open Access Journal |
| issn | 2053-1591 |
| language | English |
| last_indexed | 2024-03-12T15:34:15Z |
| publishDate | 2020-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Materials Research Express |
| spelling | doaj.art-3e2cf3049c8d4da39d2960573eab8fcc2023-08-09T16:16:30ZengIOP PublishingMaterials Research Express2053-15912020-01-017707630210.1088/2053-1591/aba395An ambipolar transistor based on a monolayer WS2 using lithium ions injectionHeshen Wang0https://orcid.org/0000-0003-4240-1104Qiye Liu1Xuemeng Feng2Zhan Zhang3Kai Wang4Zhaojun Liu5https://orcid.org/0000-0002-7746-2786Jun-Feng Dai6https://orcid.org/0000-0003-1600-8798School of Electronics and Information Technology, Sun Yat-Sen University , Guangzhou, People’s Republic of China; Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology , Shenzhen 518055, People’s Republic of ChinaPhysics Department, Southern University of Science and Technology , Shenzhen 518055, People’s Republic of China; Physics Department, The University of Hong Kong , Pokfulam, Hong Kong, People’s Republic of ChinaPhysics Department, Southern University of Science and Technology , Shenzhen 518055, People’s Republic of ChinaShenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology , Shenzhen 518055, People’s Republic of ChinaSchool of Electronics and Information Technology, Sun Yat-Sen University , Guangzhou, People’s Republic of ChinaDepartment of Electrical and Electronic Engineering, Southern University of Science and Technology , Shenzhen 518055, People’s Republic of ChinaShenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology , Shenzhen 518055, People’s Republic of ChinaAmbipolar field-effect transistor (FET) devices based on two-dimensional (2D) materials have been attracted much attention due to potential applications in integrated circuits, flexible electronics and optical sensors. However, it is difficult to tune Fermi level between conduction and valence bands using a traditional SiO _2 as dielectric layer. Here, we employed the lithium-ion conductive glass ceramic (LICGC) as the back-gate electrode in a monolayer WS _2 FET. The effective accumulation and dissipation of Li ^+ ions in the interface induce a wide tune of Fermi level in the conducting channel by electron and hole doping, which show an ambipolar transport characteristics with threshold voltages at 0.9 V and −1.3 V, respectively. Our results provide an opportunity for fabricating ultra-thin ambipolar FET based on 2D materials.https://doi.org/10.1088/2053-1591/aba395monolayer TMDCsfield effect transistorLi+ ionsfermi level |
| spellingShingle | Heshen Wang Qiye Liu Xuemeng Feng Zhan Zhang Kai Wang Zhaojun Liu Jun-Feng Dai An ambipolar transistor based on a monolayer WS2 using lithium ions injection Materials Research Express monolayer TMDCs field effect transistor Li+ ions fermi level |
| title | An ambipolar transistor based on a monolayer WS2 using lithium ions injection |
| title_full | An ambipolar transistor based on a monolayer WS2 using lithium ions injection |
| title_fullStr | An ambipolar transistor based on a monolayer WS2 using lithium ions injection |
| title_full_unstemmed | An ambipolar transistor based on a monolayer WS2 using lithium ions injection |
| title_short | An ambipolar transistor based on a monolayer WS2 using lithium ions injection |
| title_sort | ambipolar transistor based on a monolayer ws2 using lithium ions injection |
| topic | monolayer TMDCs field effect transistor Li+ ions fermi level |
| url | https://doi.org/10.1088/2053-1591/aba395 |
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