An ambipolar transistor based on a monolayer WS2 using lithium ions injection

An ambipolar transistor based on a monolayer WS2 using lithium ions injection

Ambipolar field-effect transistor (FET) devices based on two-dimensional (2D) materials have been attracted much attention due to potential applications in integrated circuits, flexible electronics and optical sensors. However, it is difficult to tune Fermi level between conduction and valence bands...

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Bibliographic Details
Main Authors: Heshen Wang, Qiye Liu, Xuemeng Feng, Zhan Zhang, Kai Wang, Zhaojun Liu, Jun-Feng Dai
Format: Article
Language:English
Published: IOP Publishing 2020-01-01
Series:Materials Research Express
Subjects:
monolayer TMDCs
field effect transistor
Li+ ions
fermi level
Online Access:https://doi.org/10.1088/2053-1591/aba395

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