Origins of high–performance giant dielectric properties in TiO2 co-doped with aliovalent ions via broadband dielectric spectroscopy
(Zn1/3Ta2/3)xTi1-xO2 ceramics with x = 0.01 (ZnTTO-1 %) and x = 0.1 (ZnTTO-10 %) were prepared by a solid-state reaction method. Remarkably, the ZnTTO-1 % and ZnTTO-10 % ceramics sintered at 1500 °C for 2 h showed a high dielectric permittivity of approximately 3.90 × 104 and 6.23 × 104 at 1 kHz w...
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| Format: | Article |
| Language: | English |
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Elsevier
2023-01-01
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| Series: | Results in Physics |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379723000037 |
| _version_ | 1797950719845728256 |
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| author | Nateeporn Thongyong Narong Chanlek Masaki Takesada Prasit Thongbai |
| author_facet | Nateeporn Thongyong Narong Chanlek Masaki Takesada Prasit Thongbai |
| author_sort | Nateeporn Thongyong |
| collection | DOAJ |
| description | (Zn1/3Ta2/3)xTi1-xO2 ceramics with x = 0.01 (ZnTTO-1 %) and x = 0.1 (ZnTTO-10 %) were prepared by a solid-state reaction method. Remarkably, the ZnTTO-1 % and ZnTTO-10 % ceramics sintered at 1500 °C for 2 h showed a high dielectric permittivity of approximately 3.90 × 104 and 6.23 × 104 at 1 kHz with low tanδ values of 0.014 and 0.024, respectively. Furthermore, the ZnTTO-1 % ceramic exhibited good temperature stability with a temperature coefficient of <±15 % in the temperature range of 218–473 K (−55–200 °C), which meets the requirement of the X9R capacitor application. The dielectric relaxations in the wide temperature range of 15–483 K was attained using broadband dielectric spectroscopy to clarify the sources of the excellent dielectric properties. The best performance was demonstrated in the ZnTTO-1 % ceramic. The electron pin defect dipole mechanism, electron hopping, and interface effects are attributed to the giant dielectric responses. |
| first_indexed | 2024-04-10T22:19:37Z |
| format | Article |
| id | doaj.art-3e73da3c2dbe407faa1f7f11b9b670f2 |
| institution | Directory Open Access Journal |
| issn | 2211-3797 |
| language | English |
| last_indexed | 2024-04-10T22:19:37Z |
| publishDate | 2023-01-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Results in Physics |
| spelling | doaj.art-3e73da3c2dbe407faa1f7f11b9b670f22023-01-18T04:30:52ZengElsevierResults in Physics2211-37972023-01-0144106210Origins of high–performance giant dielectric properties in TiO2 co-doped with aliovalent ions via broadband dielectric spectroscopyNateeporn Thongyong0Narong Chanlek1Masaki Takesada2Prasit Thongbai3Giant Dielectric and Computational Design Research Group (GD–CDR), Institute of Nanomaterials Research and Innovation for Energy (IN–RIE), Department of Physics, Faculty of Science, Khon Kaen University, Khon Kaen 40002, Thailand; Department of Physics, Hokkaido University, Sapporo 060-0810, JapanSynchrotron Light Research Institute (Public Organization), 111 University Avenue, Muang District, Nakhon Ratchasima 30000, ThailandDepartment of Physics, Hokkaido University, Sapporo 060-0810, Japan; Corresponding authors.Giant Dielectric and Computational Design Research Group (GD–CDR), Institute of Nanomaterials Research and Innovation for Energy (IN–RIE), Department of Physics, Faculty of Science, Khon Kaen University, Khon Kaen 40002, Thailand; Corresponding authors.(Zn1/3Ta2/3)xTi1-xO2 ceramics with x = 0.01 (ZnTTO-1 %) and x = 0.1 (ZnTTO-10 %) were prepared by a solid-state reaction method. Remarkably, the ZnTTO-1 % and ZnTTO-10 % ceramics sintered at 1500 °C for 2 h showed a high dielectric permittivity of approximately 3.90 × 104 and 6.23 × 104 at 1 kHz with low tanδ values of 0.014 and 0.024, respectively. Furthermore, the ZnTTO-1 % ceramic exhibited good temperature stability with a temperature coefficient of <±15 % in the temperature range of 218–473 K (−55–200 °C), which meets the requirement of the X9R capacitor application. The dielectric relaxations in the wide temperature range of 15–483 K was attained using broadband dielectric spectroscopy to clarify the sources of the excellent dielectric properties. The best performance was demonstrated in the ZnTTO-1 % ceramic. The electron pin defect dipole mechanism, electron hopping, and interface effects are attributed to the giant dielectric responses.http://www.sciencedirect.com/science/article/pii/S2211379723000037Colossal/Giant dielectric permittivityBroadband dielectric spectroscopyX-ray photoelectron spectroscopyRutile TiO2 |
| spellingShingle | Nateeporn Thongyong Narong Chanlek Masaki Takesada Prasit Thongbai Origins of high–performance giant dielectric properties in TiO2 co-doped with aliovalent ions via broadband dielectric spectroscopy Results in Physics Colossal/Giant dielectric permittivity Broadband dielectric spectroscopy X-ray photoelectron spectroscopy Rutile TiO2 |
| title | Origins of high–performance giant dielectric properties in TiO2 co-doped with aliovalent ions via broadband dielectric spectroscopy |
| title_full | Origins of high–performance giant dielectric properties in TiO2 co-doped with aliovalent ions via broadband dielectric spectroscopy |
| title_fullStr | Origins of high–performance giant dielectric properties in TiO2 co-doped with aliovalent ions via broadband dielectric spectroscopy |
| title_full_unstemmed | Origins of high–performance giant dielectric properties in TiO2 co-doped with aliovalent ions via broadband dielectric spectroscopy |
| title_short | Origins of high–performance giant dielectric properties in TiO2 co-doped with aliovalent ions via broadband dielectric spectroscopy |
| title_sort | origins of high performance giant dielectric properties in tio2 co doped with aliovalent ions via broadband dielectric spectroscopy |
| topic | Colossal/Giant dielectric permittivity Broadband dielectric spectroscopy X-ray photoelectron spectroscopy Rutile TiO2 |
| url | http://www.sciencedirect.com/science/article/pii/S2211379723000037 |
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