Amorphous SiC Thin Films Deposited by Plasma-Enhanced Chemical Vapor Deposition for Passivation in Biomedical Devices

Amorphous silicon carbide (a-SiC) is a wide-bandgap semiconductor with high robustness and biocompatibility, making it a promising material for applications in biomedical device passivation. a-SiC thin film deposition has been a subject of research for several decades with a variety of approaches in...

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Main Authors: Scott Greenhorn, Edwige Bano, Valérie Stambouli, Konstantinos Zekentes
Format: Article
Language:English
Published: MDPI AG 2024-02-01
Series:Materials
Subjects:
Online Access:https://www.mdpi.com/1996-1944/17/5/1135
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author Scott Greenhorn
Edwige Bano
Valérie Stambouli
Konstantinos Zekentes
author_facet Scott Greenhorn
Edwige Bano
Valérie Stambouli
Konstantinos Zekentes
author_sort Scott Greenhorn
collection DOAJ
description Amorphous silicon carbide (a-SiC) is a wide-bandgap semiconductor with high robustness and biocompatibility, making it a promising material for applications in biomedical device passivation. a-SiC thin film deposition has been a subject of research for several decades with a variety of approaches investigated to achieve optimal properties for multiple applications, with an emphasis on properties relevant to biomedical devices in the past decade. This review summarizes the results of many optimization studies, identifying strategies that have been used to achieve desirable film properties and discussing the proposed physical interpretations. In addition, divergent results from studies are contrasted, with attempts to reconcile the results, while areas of uncertainty are highlighted.
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spelling doaj.art-3e73ec266678456ca51b656b395d56e92024-03-12T16:49:23ZengMDPI AGMaterials1996-19442024-02-01175113510.3390/ma17051135Amorphous SiC Thin Films Deposited by Plasma-Enhanced Chemical Vapor Deposition for Passivation in Biomedical DevicesScott Greenhorn0Edwige Bano1Valérie Stambouli2Konstantinos Zekentes3The Institute of Electronic Structure and Laser of the Foundation for Research and Technology-Hellas (MRG-IESL/FORTH), GR-70013 Heraklion, GreeceCentre de Radiofréquences, Optique et Micro-nanoélectronique des Alpes, Université Grenoble Alpes, Centre National de la Recherche Scientifique, Institut Polytechnique de Grenoble, 38016 Grenoble, FranceLaboratoire des Matériaux et de la Génie Physique, Université Grenoble Alpes, Centre National de la Recherche Scientifique, Institut Polytechnique de Grenoble, 38016 Grenoble, FranceThe Institute of Electronic Structure and Laser of the Foundation for Research and Technology-Hellas (MRG-IESL/FORTH), GR-70013 Heraklion, GreeceAmorphous silicon carbide (a-SiC) is a wide-bandgap semiconductor with high robustness and biocompatibility, making it a promising material for applications in biomedical device passivation. a-SiC thin film deposition has been a subject of research for several decades with a variety of approaches investigated to achieve optimal properties for multiple applications, with an emphasis on properties relevant to biomedical devices in the past decade. This review summarizes the results of many optimization studies, identifying strategies that have been used to achieve desirable film properties and discussing the proposed physical interpretations. In addition, divergent results from studies are contrasted, with attempts to reconcile the results, while areas of uncertainty are highlighted.https://www.mdpi.com/1996-1944/17/5/1135a-SiCamorphousPECVDbiomedicalpassivation
spellingShingle Scott Greenhorn
Edwige Bano
Valérie Stambouli
Konstantinos Zekentes
Amorphous SiC Thin Films Deposited by Plasma-Enhanced Chemical Vapor Deposition for Passivation in Biomedical Devices
Materials
a-SiC
amorphous
PECVD
biomedical
passivation
title Amorphous SiC Thin Films Deposited by Plasma-Enhanced Chemical Vapor Deposition for Passivation in Biomedical Devices
title_full Amorphous SiC Thin Films Deposited by Plasma-Enhanced Chemical Vapor Deposition for Passivation in Biomedical Devices
title_fullStr Amorphous SiC Thin Films Deposited by Plasma-Enhanced Chemical Vapor Deposition for Passivation in Biomedical Devices
title_full_unstemmed Amorphous SiC Thin Films Deposited by Plasma-Enhanced Chemical Vapor Deposition for Passivation in Biomedical Devices
title_short Amorphous SiC Thin Films Deposited by Plasma-Enhanced Chemical Vapor Deposition for Passivation in Biomedical Devices
title_sort amorphous sic thin films deposited by plasma enhanced chemical vapor deposition for passivation in biomedical devices
topic a-SiC
amorphous
PECVD
biomedical
passivation
url https://www.mdpi.com/1996-1944/17/5/1135
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