Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy
In this paper we study growth of quasi-one-dimensional GaN nanowires (NWs) and nanotube (NT)-like nanostructures on Si(111) substrates covered with a thin AlN layer grown by means of plasma-assisted molecular beam epitaxy. In the first part of our study we investigate the influence of the growth par...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Beilstein-Institut
2018-01-01
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| Series: | Beilstein Journal of Nanotechnology |
| Subjects: | |
| Online Access: | https://doi.org/10.3762/bjnano.9.17 |
| _version_ | 1818942920481308672 |
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| author | Alexey D. Bolshakov Alexey M. Mozharov Georgiy A. Sapunov Igor V. Shtrom Nickolay V. Sibirev Vladimir V. Fedorov Evgeniy V. Ubyivovk Maria Tchernycheva George E. Cirlin Ivan S. Mukhin |
| author_facet | Alexey D. Bolshakov Alexey M. Mozharov Georgiy A. Sapunov Igor V. Shtrom Nickolay V. Sibirev Vladimir V. Fedorov Evgeniy V. Ubyivovk Maria Tchernycheva George E. Cirlin Ivan S. Mukhin |
| author_sort | Alexey D. Bolshakov |
| collection | DOAJ |
| description | In this paper we study growth of quasi-one-dimensional GaN nanowires (NWs) and nanotube (NT)-like nanostructures on Si(111) substrates covered with a thin AlN layer grown by means of plasma-assisted molecular beam epitaxy. In the first part of our study we investigate the influence of the growth parameters on the geometrical properties of the GaN NW arrays. First, we find that the annealing procedure carried out prior to deposition of the AlN buffer affects the elongation rate and the surface density of the wires. It has been experimentally demonstrated that the NW elongation rate and the surface density drastically depend on the substrate growth temperature, where 800 °C corresponds to the maximum elongation rate of the NWs. In the second part of the study, we introduce a new dopant-stimulated method for GaN nanotube-like nanostructure synthesis using a high-intensity Si flux. Transmission electron microscopy was used to investigate the morphological features of the GaN nanostructures. The synthesized structures have a hexagonal cross-section and possess high crystal quality. We propose a theoretical model of the novel nanostructure formation which includes the role of the dopant Si. Some of the Si-doped samples were studied with the photoluminescence (PL) technique. The analysis of the PL spectra shows that the highest value of donor concentration in the nanostructures exceeds 5∙1019 cm−3. |
| first_indexed | 2024-12-20T07:19:06Z |
| format | Article |
| id | doaj.art-3e982dbd8ac74bbe95a99adaad31d2a5 |
| institution | Directory Open Access Journal |
| issn | 2190-4286 |
| language | English |
| last_indexed | 2024-12-20T07:19:06Z |
| publishDate | 2018-01-01 |
| publisher | Beilstein-Institut |
| record_format | Article |
| series | Beilstein Journal of Nanotechnology |
| spelling | doaj.art-3e982dbd8ac74bbe95a99adaad31d2a52022-12-21T19:48:43ZengBeilstein-InstitutBeilstein Journal of Nanotechnology2190-42862018-01-019114615410.3762/bjnano.9.172190-4286-9-17Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxyAlexey D. Bolshakov0Alexey M. Mozharov1Georgiy A. Sapunov2Igor V. Shtrom3Nickolay V. Sibirev4Vladimir V. Fedorov5Evgeniy V. Ubyivovk6Maria Tchernycheva7George E. Cirlin8Ivan S. Mukhin9St. Petersburg Academic University, Khlopina 8/3, 194021 St. Petersburg, RussiaSt. Petersburg Academic University, Khlopina 8/3, 194021 St. Petersburg, RussiaSt. Petersburg Academic University, Khlopina 8/3, 194021 St. Petersburg, RussiaIoffe Institute, Politekhnicheskaya 29, 194021 St. Petersburg, RussiaSt. Petersburg State University, 7/9 Universitetskaya emb., 199034 St. Petersburg, RussiaSt. Petersburg Academic University, Khlopina 8/3, 194021 St. Petersburg, RussiaSt. Petersburg State University, 7/9 Universitetskaya emb., 199034 St. Petersburg, RussiaInstitut d’Electronique Fondamentale, UMR 8622 CNRS, University Paris Sud, University Paris-Saclay, 91405 Orsay cedex, FranceSt. Petersburg Academic University, Khlopina 8/3, 194021 St. Petersburg, RussiaSt. Petersburg Academic University, Khlopina 8/3, 194021 St. Petersburg, RussiaIn this paper we study growth of quasi-one-dimensional GaN nanowires (NWs) and nanotube (NT)-like nanostructures on Si(111) substrates covered with a thin AlN layer grown by means of plasma-assisted molecular beam epitaxy. In the first part of our study we investigate the influence of the growth parameters on the geometrical properties of the GaN NW arrays. First, we find that the annealing procedure carried out prior to deposition of the AlN buffer affects the elongation rate and the surface density of the wires. It has been experimentally demonstrated that the NW elongation rate and the surface density drastically depend on the substrate growth temperature, where 800 °C corresponds to the maximum elongation rate of the NWs. In the second part of the study, we introduce a new dopant-stimulated method for GaN nanotube-like nanostructure synthesis using a high-intensity Si flux. Transmission electron microscopy was used to investigate the morphological features of the GaN nanostructures. The synthesized structures have a hexagonal cross-section and possess high crystal quality. We propose a theoretical model of the novel nanostructure formation which includes the role of the dopant Si. Some of the Si-doped samples were studied with the photoluminescence (PL) technique. The analysis of the PL spectra shows that the highest value of donor concentration in the nanostructures exceeds 5∙1019 cm−3.https://doi.org/10.3762/bjnano.9.17A3B5 on SiepitaxyGaNMBEnanowiresnanotubesnanotube-like nanostructuresSi |
| spellingShingle | Alexey D. Bolshakov Alexey M. Mozharov Georgiy A. Sapunov Igor V. Shtrom Nickolay V. Sibirev Vladimir V. Fedorov Evgeniy V. Ubyivovk Maria Tchernycheva George E. Cirlin Ivan S. Mukhin Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy Beilstein Journal of Nanotechnology A3B5 on Si epitaxy GaN MBE nanowires nanotubes nanotube-like nanostructures Si |
| title | Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy |
| title_full | Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy |
| title_fullStr | Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy |
| title_full_unstemmed | Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy |
| title_short | Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy |
| title_sort | dopant stimulated growth of gan nanotube like nanostructures on si 111 by molecular beam epitaxy |
| topic | A3B5 on Si epitaxy GaN MBE nanowires nanotubes nanotube-like nanostructures Si |
| url | https://doi.org/10.3762/bjnano.9.17 |
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