GaAs/Ge/Si epitaxial substrates: Development and characteristics
We developed high quality 2-inch GaAs/Ge/Si (100) epitaxial substrates, which may be used instead of GaAs monolithic substrates for fabrication of solar cells, photodetectors, LEDs, lasers, etc. A 200–300 nm Ge buffer layer was grown on Si substrates using the HW-CVD technique at 300°C, a tantalum s...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2017-01-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4974498 |
| _version_ | 1819152542787960832 |
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| author | Yury Buzynin Vladimir Shengurov Boris Zvonkov Alexander Buzynin Sergey Denisov Nikolay Baidus Michail Drozdov Dmitry Pavlov Pavel Yunin |
| author_facet | Yury Buzynin Vladimir Shengurov Boris Zvonkov Alexander Buzynin Sergey Denisov Nikolay Baidus Michail Drozdov Dmitry Pavlov Pavel Yunin |
| author_sort | Yury Buzynin |
| collection | DOAJ |
| description | We developed high quality 2-inch GaAs/Ge/Si (100) epitaxial substrates, which may be used instead of GaAs monolithic substrates for fabrication of solar cells, photodetectors, LEDs, lasers, etc. A 200–300 nm Ge buffer layer was grown on Si substrates using the HW-CVD technique at 300°C, a tantalum strip heated to 1400°C was used as the “hotwire”. The MOCVD method was used to grow a 1 μ GaAs layer on a Ge buffer. The TDD in the GaAs layers did not exceed (1–2)∙105 cm-2 and the surface RMS roughness value was under 1 nm. |
| first_indexed | 2024-12-22T14:50:57Z |
| format | Article |
| id | doaj.art-3eef9679526441e1b697583ab7adba4d |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-22T14:50:57Z |
| publishDate | 2017-01-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-3eef9679526441e1b697583ab7adba4d2022-12-21T18:22:19ZengAIP Publishing LLCAIP Advances2158-32262017-01-0171015304015304-610.1063/1.4974498043701ADVGaAs/Ge/Si epitaxial substrates: Development and characteristicsYury Buzynin0Vladimir Shengurov1Boris Zvonkov2Alexander Buzynin3Sergey Denisov4Nikolay Baidus5Michail Drozdov6Dmitry Pavlov7Pavel Yunin8Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105, Nizhny Novgorod, RussiaLobachevski State University, 23 Gagarin Ave., 603950, Nizhny Novgorod, RussiaLobachevski State University, 23 Gagarin Ave., 603950, Nizhny Novgorod, RussiaProkhorov General Physics Institute, Russian Academy of Sciences, 38 Vavilov st., 119991, Moscow, RussiaLobachevski State University, 23 Gagarin Ave., 603950, Nizhny Novgorod, RussiaLobachevski State University, 23 Gagarin Ave., 603950, Nizhny Novgorod, RussiaInstitute for Physics of Microstructures, Russian Academy of Sciences, GSP-105, Nizhny Novgorod, RussiaLobachevski State University, 23 Gagarin Ave., 603950, Nizhny Novgorod, RussiaInstitute for Physics of Microstructures, Russian Academy of Sciences, GSP-105, Nizhny Novgorod, RussiaWe developed high quality 2-inch GaAs/Ge/Si (100) epitaxial substrates, which may be used instead of GaAs monolithic substrates for fabrication of solar cells, photodetectors, LEDs, lasers, etc. A 200–300 nm Ge buffer layer was grown on Si substrates using the HW-CVD technique at 300°C, a tantalum strip heated to 1400°C was used as the “hotwire”. The MOCVD method was used to grow a 1 μ GaAs layer on a Ge buffer. The TDD in the GaAs layers did not exceed (1–2)∙105 cm-2 and the surface RMS roughness value was under 1 nm.http://dx.doi.org/10.1063/1.4974498 |
| spellingShingle | Yury Buzynin Vladimir Shengurov Boris Zvonkov Alexander Buzynin Sergey Denisov Nikolay Baidus Michail Drozdov Dmitry Pavlov Pavel Yunin GaAs/Ge/Si epitaxial substrates: Development and characteristics AIP Advances |
| title | GaAs/Ge/Si epitaxial substrates: Development and characteristics |
| title_full | GaAs/Ge/Si epitaxial substrates: Development and characteristics |
| title_fullStr | GaAs/Ge/Si epitaxial substrates: Development and characteristics |
| title_full_unstemmed | GaAs/Ge/Si epitaxial substrates: Development and characteristics |
| title_short | GaAs/Ge/Si epitaxial substrates: Development and characteristics |
| title_sort | gaas ge si epitaxial substrates development and characteristics |
| url | http://dx.doi.org/10.1063/1.4974498 |
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