Design of a GaAs-Based Ka-Band Low Noise Amplifier MMIC with Gain Flatness Enhancement

Design of a GaAs-Based Ka-Band Low Noise Amplifier MMIC with Gain Flatness Enhancement

This paper presents a GaAs-based Ka-band low noise amplifier (LNA) with gain flatness enhancement. Active device optimization and inductive degeneration techniques were employed to obtain a low noise figure (NF) and good input/output return loss. In order to achieve a flat gain response over a wide...

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Bibliographic Details
Main Authors: Zhe Yang, Kuisong Wang, Yihui Fan, Yuepeng Yan, Xiaoxin Liang
Format: Article
Language:English
Published: MDPI AG 2023-05-01
Series:Electronics
Subjects:
LNA
Ka band
GaAs
monolithic microwave integrated circuit
Online Access:https://www.mdpi.com/2079-9292/12/10/2325

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