Electrical and Structural Properties of CVD-Graphene Oxidized Using KMnO<sub>4</sub>/H<sub>2</sub>SO<sub>4</sub> Solution
We report the electrical properties of graphene grown via chemical vapor deposition (CVD-graphene) and oxidized using a KMnO<sub>4</sub>/dilute H<sub>2</sub>SO<sub>4</sub> mixture. CVD-graphene was successfully oxidized without any pores or peeling off from the su...
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MDPI AG
2022-03-01
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| Online Access: | https://www.mdpi.com/2073-4352/12/4/439 |
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| author | Jin-Seok Choi Ki-Sik Im Tae-Kyun Lee Yeo-Jin Choi Sung-Jin An |
| author_facet | Jin-Seok Choi Ki-Sik Im Tae-Kyun Lee Yeo-Jin Choi Sung-Jin An |
| author_sort | Jin-Seok Choi |
| collection | DOAJ |
| description | We report the electrical properties of graphene grown via chemical vapor deposition (CVD-graphene) and oxidized using a KMnO<sub>4</sub>/dilute H<sub>2</sub>SO<sub>4</sub> mixture. CVD-graphene was successfully oxidized without any pores or peeling off from the substrates. When the H<sub>2</sub>SO<sub>4</sub> concentration was increased, the electrical resistance of the oxidized graphene (OG) increased. In particular, OG-20 shows a nonlinear current–voltage curve similar to that of a diode owing to direct tunneling through the interfaces between the nanosized sp<sup>2</sup> and sp<sup>3</sup> regions. The changes in electrical properties occurred because of structural evolution. As the H<sub>2</sub>SO<sub>4</sub> concentration increased, the number of oxygen functional groups (epoxide/hydroxyl and carboxyl groups) in the OG increased. In addition, a reduction in the average distance between defects in the OG was determined using Raman spectroscopy. Oxidation using a KMnO<sub>4</sub>/dilute H<sub>2</sub>SO<sub>4</sub> mixture results in CVD-graphene with modified electrical properties for graphene-based applications. |
| first_indexed | 2024-03-09T10:59:01Z |
| format | Article |
| id | doaj.art-3f374ff3b5f34329ac471e6431fa810b |
| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-03-09T10:59:01Z |
| publishDate | 2022-03-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Crystals |
| spelling | doaj.art-3f374ff3b5f34329ac471e6431fa810b2023-12-01T01:23:03ZengMDPI AGCrystals2073-43522022-03-0112443910.3390/cryst12040439Electrical and Structural Properties of CVD-Graphene Oxidized Using KMnO<sub>4</sub>/H<sub>2</sub>SO<sub>4</sub> SolutionJin-Seok Choi0Ki-Sik Im1Tae-Kyun Lee2Yeo-Jin Choi3Sung-Jin An4Department of Advanced Materials Science and Engineering, Kumoh National Institute of Technology, Gumi 39177, KoreaAdvanced Materials Research Center, Kumoh National Institute of Technology, Gumi 39177, KoreaDepartment of Advanced Materials Science and Engineering, Kumoh National Institute of Technology, Gumi 39177, KoreaDepartment of Advanced Materials Science and Engineering, Kumoh National Institute of Technology, Gumi 39177, KoreaDepartment of Advanced Materials Science and Engineering, Kumoh National Institute of Technology, Gumi 39177, KoreaWe report the electrical properties of graphene grown via chemical vapor deposition (CVD-graphene) and oxidized using a KMnO<sub>4</sub>/dilute H<sub>2</sub>SO<sub>4</sub> mixture. CVD-graphene was successfully oxidized without any pores or peeling off from the substrates. When the H<sub>2</sub>SO<sub>4</sub> concentration was increased, the electrical resistance of the oxidized graphene (OG) increased. In particular, OG-20 shows a nonlinear current–voltage curve similar to that of a diode owing to direct tunneling through the interfaces between the nanosized sp<sup>2</sup> and sp<sup>3</sup> regions. The changes in electrical properties occurred because of structural evolution. As the H<sub>2</sub>SO<sub>4</sub> concentration increased, the number of oxygen functional groups (epoxide/hydroxyl and carboxyl groups) in the OG increased. In addition, a reduction in the average distance between defects in the OG was determined using Raman spectroscopy. Oxidation using a KMnO<sub>4</sub>/dilute H<sub>2</sub>SO<sub>4</sub> mixture results in CVD-graphene with modified electrical properties for graphene-based applications.https://www.mdpi.com/2073-4352/12/4/439grapheneoxidized grapheneoxygen functional groupspotassium permanganatesulfuric acid |
| spellingShingle | Jin-Seok Choi Ki-Sik Im Tae-Kyun Lee Yeo-Jin Choi Sung-Jin An Electrical and Structural Properties of CVD-Graphene Oxidized Using KMnO<sub>4</sub>/H<sub>2</sub>SO<sub>4</sub> Solution Crystals graphene oxidized graphene oxygen functional groups potassium permanganate sulfuric acid |
| title | Electrical and Structural Properties of CVD-Graphene Oxidized Using KMnO<sub>4</sub>/H<sub>2</sub>SO<sub>4</sub> Solution |
| title_full | Electrical and Structural Properties of CVD-Graphene Oxidized Using KMnO<sub>4</sub>/H<sub>2</sub>SO<sub>4</sub> Solution |
| title_fullStr | Electrical and Structural Properties of CVD-Graphene Oxidized Using KMnO<sub>4</sub>/H<sub>2</sub>SO<sub>4</sub> Solution |
| title_full_unstemmed | Electrical and Structural Properties of CVD-Graphene Oxidized Using KMnO<sub>4</sub>/H<sub>2</sub>SO<sub>4</sub> Solution |
| title_short | Electrical and Structural Properties of CVD-Graphene Oxidized Using KMnO<sub>4</sub>/H<sub>2</sub>SO<sub>4</sub> Solution |
| title_sort | electrical and structural properties of cvd graphene oxidized using kmno sub 4 sub h sub 2 sub so sub 4 sub solution |
| topic | graphene oxidized graphene oxygen functional groups potassium permanganate sulfuric acid |
| url | https://www.mdpi.com/2073-4352/12/4/439 |
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