DC and 28 GHz Reliability of a SOI FET Technology
We introduce experimental results of the I-V degradation characteristics of a Silicon SOI technology for RF applications when stressed under both; a 28 GHz and a DC stress input signals. Then we compare the effect of DC and RF stress on threshold voltage, transconductance, and drain current capabili...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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IEEE
2020-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8894470/ |
| _version_ | 1818618662444072960 |
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| author | Edmundo A. Gutierrez-D. Jairo Mendez-V. Julio C. Tinoco Emmanuel Torres Rios Oscar V. Huerta-G. |
| author_facet | Edmundo A. Gutierrez-D. Jairo Mendez-V. Julio C. Tinoco Emmanuel Torres Rios Oscar V. Huerta-G. |
| author_sort | Edmundo A. Gutierrez-D. |
| collection | DOAJ |
| description | We introduce experimental results of the I-V degradation characteristics of a Silicon SOI technology for RF applications when stressed under both; a 28 GHz and a DC stress input signals. Then we compare the effect of DC and RF stress on threshold voltage, transconductance, and drain current capability. We observe that reliability under RF stress is gate voltage dependent, and in some cases an improvement (“healing”) of the I-V characteristics is observed. A hypothetical explanation for the degradation/enhancement under RF stress is attributed to a self-heating and self-healing (SH<sup>2</sup>) mechanism. The degradation mechanism is also simulated, and the reliability model tested, with Cadence. |
| first_indexed | 2024-12-16T17:25:09Z |
| format | Article |
| id | doaj.art-3f4f5d9d46844d6fb9f37ea808ca3b65 |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-12-16T17:25:09Z |
| publishDate | 2020-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-3f4f5d9d46844d6fb9f37ea808ca3b652022-12-21T22:23:04ZengIEEEIEEE Journal of the Electron Devices Society2168-67342020-01-01838539010.1109/JEDS.2019.29524498894470DC and 28 GHz Reliability of a SOI FET TechnologyEdmundo A. Gutierrez-D.0https://orcid.org/0000-0002-3015-8736Jairo Mendez-V.1https://orcid.org/0000-0002-0947-8727Julio C. Tinoco2https://orcid.org/0000-0001-9747-2650Emmanuel Torres Rios3https://orcid.org/0000-0002-2385-4725Oscar V. Huerta-G.4https://orcid.org/0000-0002-8037-0161Department of Electronics, National Institute for Astrophysics, Optics and Electronics, Puebla, MexicoDepartment of Electronics, National Institute for Astrophysics, Optics and Electronics, Puebla, MexicoCentro Microna, Universidad Veracruzana, Veracruz, MexicoDepartment of Computers Science, ITESM, Puebla, MexicoDepartment of Electronics, National Institute for Astrophysics, Optics and Electronics, Puebla, MexicoWe introduce experimental results of the I-V degradation characteristics of a Silicon SOI technology for RF applications when stressed under both; a 28 GHz and a DC stress input signals. Then we compare the effect of DC and RF stress on threshold voltage, transconductance, and drain current capability. We observe that reliability under RF stress is gate voltage dependent, and in some cases an improvement (“healing”) of the I-V characteristics is observed. A hypothetical explanation for the degradation/enhancement under RF stress is attributed to a self-heating and self-healing (SH<sup>2</sup>) mechanism. The degradation mechanism is also simulated, and the reliability model tested, with Cadence.https://ieeexplore.ieee.org/document/8894470/SOIFET28 GHzdegradationreliability |
| spellingShingle | Edmundo A. Gutierrez-D. Jairo Mendez-V. Julio C. Tinoco Emmanuel Torres Rios Oscar V. Huerta-G. DC and 28 GHz Reliability of a SOI FET Technology IEEE Journal of the Electron Devices Society SOI FET 28 GHz degradation reliability |
| title | DC and 28 GHz Reliability of a SOI FET Technology |
| title_full | DC and 28 GHz Reliability of a SOI FET Technology |
| title_fullStr | DC and 28 GHz Reliability of a SOI FET Technology |
| title_full_unstemmed | DC and 28 GHz Reliability of a SOI FET Technology |
| title_short | DC and 28 GHz Reliability of a SOI FET Technology |
| title_sort | dc and 28 ghz reliability of a soi fet technology |
| topic | SOI FET 28 GHz degradation reliability |
| url | https://ieeexplore.ieee.org/document/8894470/ |
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