The Influence of Special Environments on SiC MOSFETs
In this work, the influences of special environments (hydrogen gas and high temperature, high humidity environments) on the performance of three types of SiC MOSFETs are investigated. The results reveal several noteworthy observations. Firstly, after 500 h in a hydrogen gas environment, all the SiC...
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2023-09-01
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| Online Access: | https://www.mdpi.com/1996-1944/16/18/6193 |
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| author | Zhigang Li Jie Jiang Zhiyuan He Shengdong Hu Yijun Shi Zhenbo Zhao Yigang He Yiqiang Chen Guoguang Lu |
| author_facet | Zhigang Li Jie Jiang Zhiyuan He Shengdong Hu Yijun Shi Zhenbo Zhao Yigang He Yiqiang Chen Guoguang Lu |
| author_sort | Zhigang Li |
| collection | DOAJ |
| description | In this work, the influences of special environments (hydrogen gas and high temperature, high humidity environments) on the performance of three types of SiC MOSFETs are investigated. The results reveal several noteworthy observations. Firstly, after 500 h in a hydrogen gas environment, all the SiC MOSFETs exhibited a negative drift in threshold voltage, accompanied by an increase in maximum transconductance and drain current (@ V<sub>GS</sub>/V<sub>DS</sub> = 13 V/3 V). This phenomenon can be attributed to that the hydrogen atoms can increase the positive fixed charges in the oxide and increase the electron mobility in the channel. In addition, high temperature did not intensify the impact of hydrogen on the devices and electron mobility. Instead, prolonged exposure to high temperatures may induce stress on the SiO<sub>2</sub>/SiC interface, leading to a decrease in electron mobility, subsequently reducing the transconductance and drain current (@ V<sub>GS</sub>/V<sub>DS</sub> = 13 V/3 V). The high temperature, high humidity environment can cause a certain negative drift in the devices’ threshold voltage. With the increasing duration of the experiment, the maximum transconductance and drain current (@ V<sub>GS</sub>/V<sub>DS</sub> = 18V (20 V)/3 V) gradually decreased. This may be because the presence of moisture can lead to corrosion of the devices’ metal contacts and interconnects, which can increase the devices’ resistance and lead to a decrease in the devices’ maximum transconductance and drain current. |
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| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-10T22:30:53Z |
| publishDate | 2023-09-01 |
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| series | Materials |
| spelling | doaj.art-3f65b968427446b6b874dfacc100509f2023-11-19T11:44:08ZengMDPI AGMaterials1996-19442023-09-011618619310.3390/ma16186193The Influence of Special Environments on SiC MOSFETsZhigang Li0Jie Jiang1Zhiyuan He2Shengdong Hu3Yijun Shi4Zhenbo Zhao5Yigang He6Yiqiang Chen7Guoguang Lu8School of Electrical Engineering and Automation, Hefei University of Technology, Hefei 230009, ChinaSchool of Microelectronics and Communication Engineering, Chongqing University, Chongqing 400044, ChinaThe Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic, Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, ChinaSchool of Microelectronics and Communication Engineering, Chongqing University, Chongqing 400044, ChinaThe Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic, Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, ChinaThe Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic, Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, ChinaSchool of Electrical Engineering and Automation, Hefei University of Technology, Hefei 230009, ChinaThe Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic, Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, ChinaThe Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic, Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, ChinaIn this work, the influences of special environments (hydrogen gas and high temperature, high humidity environments) on the performance of three types of SiC MOSFETs are investigated. The results reveal several noteworthy observations. Firstly, after 500 h in a hydrogen gas environment, all the SiC MOSFETs exhibited a negative drift in threshold voltage, accompanied by an increase in maximum transconductance and drain current (@ V<sub>GS</sub>/V<sub>DS</sub> = 13 V/3 V). This phenomenon can be attributed to that the hydrogen atoms can increase the positive fixed charges in the oxide and increase the electron mobility in the channel. In addition, high temperature did not intensify the impact of hydrogen on the devices and electron mobility. Instead, prolonged exposure to high temperatures may induce stress on the SiO<sub>2</sub>/SiC interface, leading to a decrease in electron mobility, subsequently reducing the transconductance and drain current (@ V<sub>GS</sub>/V<sub>DS</sub> = 13 V/3 V). The high temperature, high humidity environment can cause a certain negative drift in the devices’ threshold voltage. With the increasing duration of the experiment, the maximum transconductance and drain current (@ V<sub>GS</sub>/V<sub>DS</sub> = 18V (20 V)/3 V) gradually decreased. This may be because the presence of moisture can lead to corrosion of the devices’ metal contacts and interconnects, which can increase the devices’ resistance and lead to a decrease in the devices’ maximum transconductance and drain current.https://www.mdpi.com/1996-1944/16/18/6193SiC MOSFETshydrogen gasHASTplanar gate structuredual gate groove structureasymmetric groove structure |
| spellingShingle | Zhigang Li Jie Jiang Zhiyuan He Shengdong Hu Yijun Shi Zhenbo Zhao Yigang He Yiqiang Chen Guoguang Lu The Influence of Special Environments on SiC MOSFETs Materials SiC MOSFETs hydrogen gas HAST planar gate structure dual gate groove structure asymmetric groove structure |
| title | The Influence of Special Environments on SiC MOSFETs |
| title_full | The Influence of Special Environments on SiC MOSFETs |
| title_fullStr | The Influence of Special Environments on SiC MOSFETs |
| title_full_unstemmed | The Influence of Special Environments on SiC MOSFETs |
| title_short | The Influence of Special Environments on SiC MOSFETs |
| title_sort | influence of special environments on sic mosfets |
| topic | SiC MOSFETs hydrogen gas HAST planar gate structure dual gate groove structure asymmetric groove structure |
| url | https://www.mdpi.com/1996-1944/16/18/6193 |
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