Design of 960~1 400 MHz broadband power amplifier
Based on laterally diffused metal-oxide-semiconductor (LDMOS) devices, a broadband RF power amplifier for L-band was developed. The amplifier is composed of two stages of amplification and cascade connection. In order to achieve broadband and good output standing wave, the final stage power amplifie...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | zho |
| Published: |
National Computer System Engineering Research Institute of China
2023-04-01
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| Series: | Dianzi Jishu Yingyong |
| Subjects: | |
| Online Access: | http://www.chinaaet.com/article/3000160455 |
| _version_ | 1797447910627999744 |
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| author | Cheng Sujie Yao Xiaojiang Cong Mifang Wang Weimin Gao Jin |
| author_facet | Cheng Sujie Yao Xiaojiang Cong Mifang Wang Weimin Gao Jin |
| author_sort | Cheng Sujie |
| collection | DOAJ |
| description | Based on laterally diffused metal-oxide-semiconductor (LDMOS) devices, a broadband RF power amplifier for L-band was developed. The amplifier is composed of two stages of amplification and cascade connection. In order to achieve broadband and good output standing wave, the final stage power amplifier adopts a balanced topology circuit structure; the inter-stage matching network uses the microstrip line and capacitor hybrid matching method to achieve broadband matching. The final measured data are as follows: the frequency covers 0.96 GHz~1.4 GHz, the overall output power of the power amplifier reaches 50 dBm (100 W), the power gain is greater than 30 dB, and the efficiency is greater than 45%. The power backoff is 8 dB, and when the output power is 42 dBm, the adjacent channel power ratio (ACPR) is -40 dBC. The indicators show that the power amplifier module can be well used in radar and wireless communication transmitters. |
| first_indexed | 2024-03-09T14:02:45Z |
| format | Article |
| id | doaj.art-3f6db4335f804851bea4c411a07e2656 |
| institution | Directory Open Access Journal |
| issn | 0258-7998 |
| language | zho |
| last_indexed | 2024-03-09T14:02:45Z |
| publishDate | 2023-04-01 |
| publisher | National Computer System Engineering Research Institute of China |
| record_format | Article |
| series | Dianzi Jishu Yingyong |
| spelling | doaj.art-3f6db4335f804851bea4c411a07e26562023-11-30T05:41:31ZzhoNational Computer System Engineering Research Institute of ChinaDianzi Jishu Yingyong0258-79982023-04-01494525610.16157/j.issn.0258-7998.2233623000160455Design of 960~1 400 MHz broadband power amplifierCheng Sujie0Yao Xiaojiang1Cong Mifang2Wang Weimin3Gao Jin4(1.College of Integrated Circuit Science and Engineering， Nanjing University of Posts and Telecommunications， Nanjing 210023， China(1.College of Integrated Circuit Science and Engineering， Nanjing University of Posts and Telecommunications， Nanjing 210023， ChinaInstitute of Microelectronics， Chinese Academy of Sciences， Beijing 100029， China)(1.College of Integrated Circuit Science and Engineering， Nanjing University of Posts and Telecommunications， Nanjing 210023， China(1.College of Integrated Circuit Science and Engineering， Nanjing University of Posts and Telecommunications， Nanjing 210023， ChinaBased on laterally diffused metal-oxide-semiconductor (LDMOS) devices, a broadband RF power amplifier for L-band was developed. The amplifier is composed of two stages of amplification and cascade connection. In order to achieve broadband and good output standing wave, the final stage power amplifier adopts a balanced topology circuit structure; the inter-stage matching network uses the microstrip line and capacitor hybrid matching method to achieve broadband matching. The final measured data are as follows: the frequency covers 0.96 GHz~1.4 GHz, the overall output power of the power amplifier reaches 50 dBm (100 W), the power gain is greater than 30 dB, and the efficiency is greater than 45%. The power backoff is 8 dB, and when the output power is 42 dBm, the adjacent channel power ratio (ACPR) is -40 dBC. The indicators show that the power amplifier module can be well used in radar and wireless communication transmitters.http://www.chinaaet.com/article/3000160455laterally diffused metal oxide semiconductorl-bandbroadbandcascade |
| spellingShingle | Cheng Sujie Yao Xiaojiang Cong Mifang Wang Weimin Gao Jin Design of 960~1 400 MHz broadband power amplifier Dianzi Jishu Yingyong laterally diffused metal oxide semiconductor l-band broadband cascade |
| title | Design of 960~1 400 MHz broadband power amplifier |
| title_full | Design of 960~1 400 MHz broadband power amplifier |
| title_fullStr | Design of 960~1 400 MHz broadband power amplifier |
| title_full_unstemmed | Design of 960~1 400 MHz broadband power amplifier |
| title_short | Design of 960~1 400 MHz broadband power amplifier |
| title_sort | design of 960 1 400 mhz broadband power amplifier |
| topic | laterally diffused metal oxide semiconductor l-band broadband cascade |
| url | http://www.chinaaet.com/article/3000160455 |
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