Design of 960~1 400 MHz broadband power amplifier
Based on laterally diffused metal-oxide-semiconductor (LDMOS) devices, a broadband RF power amplifier for L-band was developed. The amplifier is composed of two stages of amplification and cascade connection. In order to achieve broadband and good output standing wave, the final stage power amplifie...
Main Authors: | , , , , |
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Format: | Article |
Language: | zho |
Published: |
National Computer System Engineering Research Institute of China
2023-04-01
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Series: | Dianzi Jishu Yingyong |
Subjects: | |
Online Access: | http://www.chinaaet.com/article/3000160455 |