Design of 960~1 400 MHz broadband power amplifier
Based on laterally diffused metal-oxide-semiconductor (LDMOS) devices, a broadband RF power amplifier for L-band was developed. The amplifier is composed of two stages of amplification and cascade connection. In order to achieve broadband and good output standing wave, the final stage power amplifie...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | zho |
| Published: |
National Computer System Engineering Research Institute of China
2023-04-01
|
| Series: | Dianzi Jishu Yingyong |
| Subjects: | |
| Online Access: | http://www.chinaaet.com/article/3000160455 |