Scalable hot carrier–assisted silicon photodetector array based on ultrathin gold film
Silicon (Si) offers cost-effective production and convenient on-chip integration for photodetection due to its well-established CMOS technology. However, the indirect bandgap of Si inherently limits its detection efficiency in the near-infrared (NIR) regime. Here, we propose a strategy to achieve hi...
| Hauptverfasser: | , , , , , , |
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| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
De Gruyter
2024-01-01
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| Schriftenreihe: | Nanophotonics |
| Schlagworte: | |
| Online Zugang: | https://doi.org/10.1515/nanoph-2023-0656 |