Antiferromagnetic CuMnAs multi-level memory cell with microelectronic compatibility
Devices based on antiferromagnetic materials have advantages of robustness to external magnetic fields and the potential for ultrafast operation. Here the authors present a multilevel antiferromagnetic memory cell that can be operated using standard electronic interfaces.
Bibliographic Details
| Main Authors: |
K. Olejník,
V. Schuler,
X. Marti,
V. Novák,
Z. Kašpar,
P. Wadley,
R. P. Campion,
K. W. Edmonds,
B. L. Gallagher,
J. Garces,
M. Baumgartner,
P. Gambardella,
T. Jungwirth |
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| Format: | Article
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| Language: | English |
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| Published: |
Nature Portfolio
2017-05-01
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| Series: | Nature Communications
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| Online Access: | https://doi.org/10.1038/ncomms15434
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