Antiferromagnetic CuMnAs multi-level memory cell with microelectronic compatibility
Devices based on antiferromagnetic materials have advantages of robustness to external magnetic fields and the potential for ultrafast operation. Here the authors present a multilevel antiferromagnetic memory cell that can be operated using standard electronic interfaces.
| Main Authors: | , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2017-05-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/ncomms15434 |
| _version_ | 1819195648274071552 |
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| author | K. Olejník V. Schuler X. Marti V. Novák Z. Kašpar P. Wadley R. P. Campion K. W. Edmonds B. L. Gallagher J. Garces M. Baumgartner P. Gambardella T. Jungwirth |
| author_facet | K. Olejník V. Schuler X. Marti V. Novák Z. Kašpar P. Wadley R. P. Campion K. W. Edmonds B. L. Gallagher J. Garces M. Baumgartner P. Gambardella T. Jungwirth |
| author_sort | K. Olejník |
| collection | DOAJ |
| description | Devices based on antiferromagnetic materials have advantages of robustness to external magnetic fields and the potential for ultrafast operation. Here the authors present a multilevel antiferromagnetic memory cell that can be operated using standard electronic interfaces. |
| first_indexed | 2024-12-23T02:16:06Z |
| format | Article |
| id | doaj.art-3fd98e0a0f1e483898fedf8277e81ea2 |
| institution | Directory Open Access Journal |
| issn | 2041-1723 |
| language | English |
| last_indexed | 2024-12-23T02:16:06Z |
| publishDate | 2017-05-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Nature Communications |
| spelling | doaj.art-3fd98e0a0f1e483898fedf8277e81ea22022-12-21T18:03:39ZengNature PortfolioNature Communications2041-17232017-05-01811710.1038/ncomms15434Antiferromagnetic CuMnAs multi-level memory cell with microelectronic compatibilityK. Olejník0V. Schuler1X. Marti2V. Novák3Z. Kašpar4P. Wadley5R. P. Campion6K. W. Edmonds7B. L. Gallagher8J. Garces9M. Baumgartner10P. Gambardella11T. Jungwirth12Institute of Physics, Academy of Sciences of the Czech RepublicInstitute of Physics, Academy of Sciences of the Czech RepublicInstitute of Physics, Academy of Sciences of the Czech RepublicInstitute of Physics, Academy of Sciences of the Czech RepublicInstitute of Physics, Academy of Sciences of the Czech RepublicSchool of Physics and Astronomy, University of NottinghamSchool of Physics and Astronomy, University of NottinghamSchool of Physics and Astronomy, University of NottinghamSchool of Physics and Astronomy, University of NottinghamIGS ResearchDepartment of Materials, ETH ZürichDepartment of Materials, ETH ZürichInstitute of Physics, Academy of Sciences of the Czech RepublicDevices based on antiferromagnetic materials have advantages of robustness to external magnetic fields and the potential for ultrafast operation. Here the authors present a multilevel antiferromagnetic memory cell that can be operated using standard electronic interfaces.https://doi.org/10.1038/ncomms15434 |
| spellingShingle | K. Olejník V. Schuler X. Marti V. Novák Z. Kašpar P. Wadley R. P. Campion K. W. Edmonds B. L. Gallagher J. Garces M. Baumgartner P. Gambardella T. Jungwirth Antiferromagnetic CuMnAs multi-level memory cell with microelectronic compatibility Nature Communications |
| title | Antiferromagnetic CuMnAs multi-level memory cell with microelectronic compatibility |
| title_full | Antiferromagnetic CuMnAs multi-level memory cell with microelectronic compatibility |
| title_fullStr | Antiferromagnetic CuMnAs multi-level memory cell with microelectronic compatibility |
| title_full_unstemmed | Antiferromagnetic CuMnAs multi-level memory cell with microelectronic compatibility |
| title_short | Antiferromagnetic CuMnAs multi-level memory cell with microelectronic compatibility |
| title_sort | antiferromagnetic cumnas multi level memory cell with microelectronic compatibility |
| url | https://doi.org/10.1038/ncomms15434 |
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