Formation peculiarities of free-standing III-v single crystalline films prepared by solution method
In this paper, liquid phase epitaxy method used for the synthesis of free-standing single crystalline films of IIIV compounds by interaction of the quaternary Sn-Al-Ga-As liquid with binary solid GaAs substrate. It is shown that the possibility of the formation of free-standing single-crystalline...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Al-Farabi Kazakh National University
2015-04-01
|
| Series: | Physical Sciences and Technology |
| Subjects: | |
| Online Access: | http://phst/index.php/journal/article/view/16 |
| Summary: | In this paper, liquid phase epitaxy method used for the synthesis of free-standing single crystalline films of IIIV
compounds by interaction of the quaternary Sn-Al-Ga-As liquid with binary solid GaAs substrate. It is
shown that the possibility of the formation of free-standing single-crystalline films in such systems is determined
by thermodynamic and kinetic conditions near liquid-solid interface at the growth temperature. On the
basis of thermodynamic analysis and experimental study of similar multi-component systems were identified
key crystallization criteria of these films. These criteria were used to predict the synthesis of free-standing binary
semiconductor films on a distance from the initial semiconductor substrate in some systems. |
|---|---|
| ISSN: | 2409-6121 |