Formation peculiarities of free-standing III-v single crystalline films prepared by solution method

Formation peculiarities of free-standing III-v single crystalline films prepared by solution method

In this paper, liquid phase epitaxy method used for the synthesis of free-standing single crystalline films of IIIV compounds by interaction of the quaternary Sn-Al-Ga-As liquid with binary solid GaAs substrate. It is shown that the possibility of the formation of free-standing single-crystalline...

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Bibliographic Details
Main Authors: V. Antoschenko, A. Migunova, V. Francev, O. Lavrischev, Y. Antochshenko
Format: Article
Language:English
Published: Al-Farabi Kazakh National University 2015-04-01
Series:Physical Sciences and Technology
Subjects:
Free-standing film
Gallium Arsenide
Solution Growth
Phase Equilibrium
III-V Compounds.
Online Access:http://phst/index.php/journal/article/view/16

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