Synaptic Transistors Exhibiting Gate-Pulse-Driven, Metal-Semiconductor Transition of Conduction
Neuromorphic devices have been investigated extensively for technological breakthroughs that could eventually replace conventional semiconductor devices. In contrast to other neuromorphic devices, the device proposed in this paper utilizes deep trap interfaces between the channel layer and the charg...
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| Format: | Article |
| Language: | English |
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MDPI AG
2021-12-01
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| Series: | Materials |
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| Online Access: | https://www.mdpi.com/1996-1944/14/24/7508 |
| _version_ | 1797502769652826112 |
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| author | Jung Wook Lim Su Jae Heo Min A. Park Jieun Kim |
| author_facet | Jung Wook Lim Su Jae Heo Min A. Park Jieun Kim |
| author_sort | Jung Wook Lim |
| collection | DOAJ |
| description | Neuromorphic devices have been investigated extensively for technological breakthroughs that could eventually replace conventional semiconductor devices. In contrast to other neuromorphic devices, the device proposed in this paper utilizes deep trap interfaces between the channel layer and the charge-inducing dielectrics (CID). The device was fabricated using in-situ atomic layer deposition (ALD) for the sequential deposition of the CID and oxide semiconductors. Upon the application of a gate bias pulse, an abrupt change in conducting states was observed in the device from the semiconductor to the metal. Additionally, numerous intermediate states could be implemented based on the number of cycles. Furthermore, each state persisted for 10,000 s after the gate pulses were removed, demonstrating excellent synaptic properties of the long-term memory. Moreover, the variation of drain current with cycle number demonstrates the device’s excellent linearity and symmetry for excitatory and inhibitory behaviors when prepared on a glass substrate intended for transparent devices. The results, therefore, suggest that such unique synaptic devices with extremely stable and superior properties could replace conventional semiconducting devices in the future. |
| first_indexed | 2024-03-10T03:40:51Z |
| format | Article |
| id | doaj.art-3fe6183a5e9c4b78bf9496453dbbfab6 |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-10T03:40:51Z |
| publishDate | 2021-12-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Materials |
| spelling | doaj.art-3fe6183a5e9c4b78bf9496453dbbfab62023-11-23T09:18:56ZengMDPI AGMaterials1996-19442021-12-011424750810.3390/ma14247508Synaptic Transistors Exhibiting Gate-Pulse-Driven, Metal-Semiconductor Transition of ConductionJung Wook Lim0Su Jae Heo1Min A. Park2Jieun Kim3Information & Communications Core Technology Creative Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), 218 Gajeong-ro, Daejeon 305-700, KoreaInformation & Communications Core Technology Creative Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), 218 Gajeong-ro, Daejeon 305-700, KoreaInformation & Communications Core Technology Creative Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), 218 Gajeong-ro, Daejeon 305-700, KoreaInformation & Communications Core Technology Creative Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), 218 Gajeong-ro, Daejeon 305-700, KoreaNeuromorphic devices have been investigated extensively for technological breakthroughs that could eventually replace conventional semiconductor devices. In contrast to other neuromorphic devices, the device proposed in this paper utilizes deep trap interfaces between the channel layer and the charge-inducing dielectrics (CID). The device was fabricated using in-situ atomic layer deposition (ALD) for the sequential deposition of the CID and oxide semiconductors. Upon the application of a gate bias pulse, an abrupt change in conducting states was observed in the device from the semiconductor to the metal. Additionally, numerous intermediate states could be implemented based on the number of cycles. Furthermore, each state persisted for 10,000 s after the gate pulses were removed, demonstrating excellent synaptic properties of the long-term memory. Moreover, the variation of drain current with cycle number demonstrates the device’s excellent linearity and symmetry for excitatory and inhibitory behaviors when prepared on a glass substrate intended for transparent devices. The results, therefore, suggest that such unique synaptic devices with extremely stable and superior properties could replace conventional semiconducting devices in the future.https://www.mdpi.com/1996-1944/14/24/7508synaptic devicemetal-semiconductor transitionlinear excitatory behaviorcharge inducing dielectric |
| spellingShingle | Jung Wook Lim Su Jae Heo Min A. Park Jieun Kim Synaptic Transistors Exhibiting Gate-Pulse-Driven, Metal-Semiconductor Transition of Conduction Materials synaptic device metal-semiconductor transition linear excitatory behavior charge inducing dielectric |
| title | Synaptic Transistors Exhibiting Gate-Pulse-Driven, Metal-Semiconductor Transition of Conduction |
| title_full | Synaptic Transistors Exhibiting Gate-Pulse-Driven, Metal-Semiconductor Transition of Conduction |
| title_fullStr | Synaptic Transistors Exhibiting Gate-Pulse-Driven, Metal-Semiconductor Transition of Conduction |
| title_full_unstemmed | Synaptic Transistors Exhibiting Gate-Pulse-Driven, Metal-Semiconductor Transition of Conduction |
| title_short | Synaptic Transistors Exhibiting Gate-Pulse-Driven, Metal-Semiconductor Transition of Conduction |
| title_sort | synaptic transistors exhibiting gate pulse driven metal semiconductor transition of conduction |
| topic | synaptic device metal-semiconductor transition linear excitatory behavior charge inducing dielectric |
| url | https://www.mdpi.com/1996-1944/14/24/7508 |
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