Extended Hückel Semi-Empirical Approach as an Efficient Method for Structural Defects Analysis in 4H-SiC

Extended Hückel Semi-Empirical Approach as an Efficient Method for Structural Defects Analysis in 4H-SiC

This paper presents an efficient method to calculate the influence of structural defects on the energy levels and energy band-gap for the 4H-SiC semiconductor. The semi-empirical extended Hückel method was applied to both ideal 4H-SiC crystal and different structures with defects like vacancies, sta...

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Bibliographic Details
Main Authors: Janusz Wozny, Andrii Kovalchuk, Jacek Podgorski, Zbigniew Lisik
Format: Article
Language:English
Published: MDPI AG 2021-03-01
Series:Materials
Subjects:
4H-SiC
defects
simulation
atomic structure
extended Hückel
semi-empirical
Online Access:https://www.mdpi.com/1996-1944/14/5/1247

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