Achieving High Performance of ZnSnO Thin-Film Transistor via Homojunction Strategy
The zinc-tin-oxide (ZTO) thin-film transistor (TFT) is one of the most promising candidates for advanced display applications, though its popularity is limited by its performances. In this work, a heterojunction channel strategy was adopted to regulate the electron transport behaviors and the TFT pe...
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-11-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/14/12/2144 |
| _version_ | 1797380044429983744 |
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| author | Wengao Pan Guoshang Zhang Xinhua Liu Kexing Song Laiyuan Ning Shuaifang Li Lijia Chen Xuefeng Zhang Tengyan Huang Huan Yang Xiaoliang Zhou Shengdong Zhang Lei Lu |
| author_facet | Wengao Pan Guoshang Zhang Xinhua Liu Kexing Song Laiyuan Ning Shuaifang Li Lijia Chen Xuefeng Zhang Tengyan Huang Huan Yang Xiaoliang Zhou Shengdong Zhang Lei Lu |
| author_sort | Wengao Pan |
| collection | DOAJ |
| description | The zinc-tin-oxide (ZTO) thin-film transistor (TFT) is one of the most promising candidates for advanced display applications, though its popularity is limited by its performances. In this work, a heterojunction channel strategy was adopted to regulate the electron transport behaviors and the TFT performances by manipulating the concentration and the distribution of oxygen vacancies, and a reasonable physical model was proposed based on experimental and simulation results. It is difficult to mediate the contradiction between mobility and threshold voltage for the single channel. Via a heterojunction channel strategy, desirable TFT performances, with mobility of 12.5 cm<sup>2</sup>/Vs, threshold voltage of 1.2 V and Ion/Ioff of 3 × 10<sup>9</sup>, are achieved when the oxygen-vacancy-enriched layer gets close to the gate insulator (GI). The enhanced performances can be mainly attributed to the formation of two-dimensional electron gas (2DEG), the insensitive potential barrier and the reasonable distribution of oxygen vacancy. On the contrary, when the oxygen-vacancy-enriched layer stays away from GI, all the main performances degenerate due to the vulnerable potential well. The findings may facilitate the development and application of heterojunction channels for improving the performances of electronic devices. |
| first_indexed | 2024-03-08T20:31:48Z |
| format | Article |
| id | doaj.art-4011dc12ff044ba3998d302ed8a5c541 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-08T20:31:48Z |
| publishDate | 2023-11-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-4011dc12ff044ba3998d302ed8a5c5412023-12-22T14:25:13ZengMDPI AGMicromachines2072-666X2023-11-011412214410.3390/mi14122144Achieving High Performance of ZnSnO Thin-Film Transistor via Homojunction StrategyWengao Pan0Guoshang Zhang1Xinhua Liu2Kexing Song3Laiyuan Ning4Shuaifang Li5Lijia Chen6Xuefeng Zhang7Tengyan Huang8Huan Yang9Xiaoliang Zhou10Shengdong Zhang11Lei Lu12Henan Key Laboratory of Advanced Conductor Materials, Institute of Materials, Henan Academy of Sciences, Zhengzhou 450046, ChinaHenan Key Laboratory of Advanced Conductor Materials, Institute of Materials, Henan Academy of Sciences, Zhengzhou 450046, ChinaHenan Key Laboratory of Advanced Conductor Materials, Institute of Materials, Henan Academy of Sciences, Zhengzhou 450046, ChinaHenan Key Laboratory of Advanced Conductor Materials, Institute of Materials, Henan Academy of Sciences, Zhengzhou 450046, ChinaSchool of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, ChinaSchool of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, ChinaSchool of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, ChinaSchool of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, ChinaSchool of Electronic and Computer Engineering, Peking University, Shenzhen 518055, ChinaSchool of Electronic and Computer Engineering, Peking University, Shenzhen 518055, ChinaSchool of Electronic and Computer Engineering, Peking University, Shenzhen 518055, ChinaSchool of Electronic and Computer Engineering, Peking University, Shenzhen 518055, ChinaSchool of Electronic and Computer Engineering, Peking University, Shenzhen 518055, ChinaThe zinc-tin-oxide (ZTO) thin-film transistor (TFT) is one of the most promising candidates for advanced display applications, though its popularity is limited by its performances. In this work, a heterojunction channel strategy was adopted to regulate the electron transport behaviors and the TFT performances by manipulating the concentration and the distribution of oxygen vacancies, and a reasonable physical model was proposed based on experimental and simulation results. It is difficult to mediate the contradiction between mobility and threshold voltage for the single channel. Via a heterojunction channel strategy, desirable TFT performances, with mobility of 12.5 cm<sup>2</sup>/Vs, threshold voltage of 1.2 V and Ion/Ioff of 3 × 10<sup>9</sup>, are achieved when the oxygen-vacancy-enriched layer gets close to the gate insulator (GI). The enhanced performances can be mainly attributed to the formation of two-dimensional electron gas (2DEG), the insensitive potential barrier and the reasonable distribution of oxygen vacancy. On the contrary, when the oxygen-vacancy-enriched layer stays away from GI, all the main performances degenerate due to the vulnerable potential well. The findings may facilitate the development and application of heterojunction channels for improving the performances of electronic devices.https://www.mdpi.com/2072-666X/14/12/2144zinc-tin oxideoxygen vacancyhomojunctionthin-film transistor |
| spellingShingle | Wengao Pan Guoshang Zhang Xinhua Liu Kexing Song Laiyuan Ning Shuaifang Li Lijia Chen Xuefeng Zhang Tengyan Huang Huan Yang Xiaoliang Zhou Shengdong Zhang Lei Lu Achieving High Performance of ZnSnO Thin-Film Transistor via Homojunction Strategy Micromachines zinc-tin oxide oxygen vacancy homojunction thin-film transistor |
| title | Achieving High Performance of ZnSnO Thin-Film Transistor via Homojunction Strategy |
| title_full | Achieving High Performance of ZnSnO Thin-Film Transistor via Homojunction Strategy |
| title_fullStr | Achieving High Performance of ZnSnO Thin-Film Transistor via Homojunction Strategy |
| title_full_unstemmed | Achieving High Performance of ZnSnO Thin-Film Transistor via Homojunction Strategy |
| title_short | Achieving High Performance of ZnSnO Thin-Film Transistor via Homojunction Strategy |
| title_sort | achieving high performance of znsno thin film transistor via homojunction strategy |
| topic | zinc-tin oxide oxygen vacancy homojunction thin-film transistor |
| url | https://www.mdpi.com/2072-666X/14/12/2144 |
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