Gallium phosphide as a new material for anodically bonded atomic sensors
Miniaturized atomic sensors are often fabricated using anodic bonding of silicon and borosilicate glass. Here we describe a technique for fabricating anodically bonded alkali-metal cells using GaP and Pyrex. GaP is a non-birefringent semiconductor that is transparent at alkali-metal resonance wavele...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2014-08-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.4891375 |
| _version_ | 1819077640231845888 |
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| author | Nezih Dural Michael V. Romalis |
| author_facet | Nezih Dural Michael V. Romalis |
| author_sort | Nezih Dural |
| collection | DOAJ |
| description | Miniaturized atomic sensors are often fabricated using anodic bonding of silicon and borosilicate glass. Here we describe a technique for fabricating anodically bonded alkali-metal cells using GaP and Pyrex. GaP is a non-birefringent semiconductor that is transparent at alkali-metal resonance wavelengths, allowing new sensor geometries. GaP also has a higher thermal conductivity and lower He permeability than borosilicate glass and can be anodically bonded below 200 °C, which can also be advantageous in other vacuum sealing applications. |
| first_indexed | 2024-12-21T19:00:25Z |
| format | Article |
| id | doaj.art-402420d515b84b968df6f3395555ea24 |
| institution | Directory Open Access Journal |
| issn | 2166-532X |
| language | English |
| last_indexed | 2024-12-21T19:00:25Z |
| publishDate | 2014-08-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj.art-402420d515b84b968df6f3395555ea242022-12-21T18:53:30ZengAIP Publishing LLCAPL Materials2166-532X2014-08-0128086101086101-410.1063/1.4891375015407APMGallium phosphide as a new material for anodically bonded atomic sensorsNezih Dural0Michael V. Romalis1Physics Department, Princeton University, Princeton, New Jersey 08540, USAPhysics Department, Princeton University, Princeton, New Jersey 08540, USAMiniaturized atomic sensors are often fabricated using anodic bonding of silicon and borosilicate glass. Here we describe a technique for fabricating anodically bonded alkali-metal cells using GaP and Pyrex. GaP is a non-birefringent semiconductor that is transparent at alkali-metal resonance wavelengths, allowing new sensor geometries. GaP also has a higher thermal conductivity and lower He permeability than borosilicate glass and can be anodically bonded below 200 °C, which can also be advantageous in other vacuum sealing applications.http://dx.doi.org/10.1063/1.4891375 |
| spellingShingle | Nezih Dural Michael V. Romalis Gallium phosphide as a new material for anodically bonded atomic sensors APL Materials |
| title | Gallium phosphide as a new material for anodically bonded atomic sensors |
| title_full | Gallium phosphide as a new material for anodically bonded atomic sensors |
| title_fullStr | Gallium phosphide as a new material for anodically bonded atomic sensors |
| title_full_unstemmed | Gallium phosphide as a new material for anodically bonded atomic sensors |
| title_short | Gallium phosphide as a new material for anodically bonded atomic sensors |
| title_sort | gallium phosphide as a new material for anodically bonded atomic sensors |
| url | http://dx.doi.org/10.1063/1.4891375 |
| work_keys_str_mv | AT nezihdural galliumphosphideasanewmaterialforanodicallybondedatomicsensors AT michaelvromalis galliumphosphideasanewmaterialforanodicallybondedatomicsensors |