NO and NO2 Sensing Properties of WO3 and Co3O4 Based Gas Sensors
Semiconductor-based gas sensors that use n-type WO3 or p-type Co3O4 powder were fabricated and their gas sensing properties toward NO2 or NO (0.5–5 ppm in air) were investigated at 100 °C or 200 °C. The resistance of the WO3-based sensor increased on exposure to NO2 and NO. On the other hand, the re...
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MDPI AG
2013-09-01
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Series: | Sensors |
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Online Access: | http://www.mdpi.com/1424-8220/13/9/12467 |
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author | Woosuck Shin Noriya Izu Takafumi Akamatsu Toshio Itoh |
author_facet | Woosuck Shin Noriya Izu Takafumi Akamatsu Toshio Itoh |
author_sort | Woosuck Shin |
collection | DOAJ |
description | Semiconductor-based gas sensors that use n-type WO3 or p-type Co3O4 powder were fabricated and their gas sensing properties toward NO2 or NO (0.5–5 ppm in air) were investigated at 100 °C or 200 °C. The resistance of the WO3-based sensor increased on exposure to NO2 and NO. On the other hand, the resistance of the Co3O4-based sensor varied depending on the operating temperature and the gas species. The chemical states of the surface of WO3 or those of the Co3O4 powder on exposure to 1 ppm NO2 and NO were investigated by diffuse reflectance infrared Fourier transform (DRIFT) spectroscopy. No clear differences between the chemical states of the metal oxide surface exposed to NO2 or NO could be detected from the DRIFT spectra. |
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id | doaj.art-402ec55565ff4f5a8a6c92eee7fa8841 |
institution | Directory Open Access Journal |
issn | 1424-8220 |
language | English |
last_indexed | 2024-04-11T22:04:00Z |
publishDate | 2013-09-01 |
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spelling | doaj.art-402ec55565ff4f5a8a6c92eee7fa88412022-12-22T04:00:47ZengMDPI AGSensors1424-82202013-09-01139124671248110.3390/s130912467NO and NO2 Sensing Properties of WO3 and Co3O4 Based Gas SensorsWoosuck ShinNoriya IzuTakafumi AkamatsuToshio ItohSemiconductor-based gas sensors that use n-type WO3 or p-type Co3O4 powder were fabricated and their gas sensing properties toward NO2 or NO (0.5–5 ppm in air) were investigated at 100 °C or 200 °C. The resistance of the WO3-based sensor increased on exposure to NO2 and NO. On the other hand, the resistance of the Co3O4-based sensor varied depending on the operating temperature and the gas species. The chemical states of the surface of WO3 or those of the Co3O4 powder on exposure to 1 ppm NO2 and NO were investigated by diffuse reflectance infrared Fourier transform (DRIFT) spectroscopy. No clear differences between the chemical states of the metal oxide surface exposed to NO2 or NO could be detected from the DRIFT spectra.http://www.mdpi.com/1424-8220/13/9/12467gas sensormetal oxide semiconductordiffuse reflectance infrared Fourier transform spectroscopyNO2NO |
spellingShingle | Woosuck Shin Noriya Izu Takafumi Akamatsu Toshio Itoh NO and NO2 Sensing Properties of WO3 and Co3O4 Based Gas Sensors Sensors gas sensor metal oxide semiconductor diffuse reflectance infrared Fourier transform spectroscopy NO2 NO |
title | NO and NO2 Sensing Properties of WO3 and Co3O4 Based Gas Sensors |
title_full | NO and NO2 Sensing Properties of WO3 and Co3O4 Based Gas Sensors |
title_fullStr | NO and NO2 Sensing Properties of WO3 and Co3O4 Based Gas Sensors |
title_full_unstemmed | NO and NO2 Sensing Properties of WO3 and Co3O4 Based Gas Sensors |
title_short | NO and NO2 Sensing Properties of WO3 and Co3O4 Based Gas Sensors |
title_sort | no and no2 sensing properties of wo3 and co3o4 based gas sensors |
topic | gas sensor metal oxide semiconductor diffuse reflectance infrared Fourier transform spectroscopy NO2 NO |
url | http://www.mdpi.com/1424-8220/13/9/12467 |
work_keys_str_mv | AT woosuckshin noandno2sensingpropertiesofwo3andco3o4basedgassensors AT noriyaizu noandno2sensingpropertiesofwo3andco3o4basedgassensors AT takafumiakamatsu noandno2sensingpropertiesofwo3andco3o4basedgassensors AT toshioitoh noandno2sensingpropertiesofwo3andco3o4basedgassensors |