NO and NO2 Sensing Properties of WO3 and Co3O4 Based Gas Sensors

Semiconductor-based gas sensors that use n-type WO3 or p-type Co3O4 powder were fabricated and their gas sensing properties toward NO2 or NO (0.5–5 ppm in air) were investigated at 100 °C or 200 °C. The resistance of the WO3-based sensor increased on exposure to NO2 and NO. On the other hand, the re...

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Main Authors: Woosuck Shin, Noriya Izu, Takafumi Akamatsu, Toshio Itoh
Format: Article
Language:English
Published: MDPI AG 2013-09-01
Series:Sensors
Subjects:
Online Access:http://www.mdpi.com/1424-8220/13/9/12467
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author Woosuck Shin
Noriya Izu
Takafumi Akamatsu
Toshio Itoh
author_facet Woosuck Shin
Noriya Izu
Takafumi Akamatsu
Toshio Itoh
author_sort Woosuck Shin
collection DOAJ
description Semiconductor-based gas sensors that use n-type WO3 or p-type Co3O4 powder were fabricated and their gas sensing properties toward NO2 or NO (0.5–5 ppm in air) were investigated at 100 °C or 200 °C. The resistance of the WO3-based sensor increased on exposure to NO2 and NO. On the other hand, the resistance of the Co3O4-based sensor varied depending on the operating temperature and the gas species. The chemical states of the surface of WO3 or those of the Co3O4 powder on exposure to 1 ppm NO2 and NO were investigated by diffuse reflectance infrared Fourier transform (DRIFT) spectroscopy. No clear differences between the chemical states of the metal oxide surface exposed to NO2 or NO could be detected from the DRIFT spectra.
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spelling doaj.art-402ec55565ff4f5a8a6c92eee7fa88412022-12-22T04:00:47ZengMDPI AGSensors1424-82202013-09-01139124671248110.3390/s130912467NO and NO2 Sensing Properties of WO3 and Co3O4 Based Gas SensorsWoosuck ShinNoriya IzuTakafumi AkamatsuToshio ItohSemiconductor-based gas sensors that use n-type WO3 or p-type Co3O4 powder were fabricated and their gas sensing properties toward NO2 or NO (0.5–5 ppm in air) were investigated at 100 °C or 200 °C. The resistance of the WO3-based sensor increased on exposure to NO2 and NO. On the other hand, the resistance of the Co3O4-based sensor varied depending on the operating temperature and the gas species. The chemical states of the surface of WO3 or those of the Co3O4 powder on exposure to 1 ppm NO2 and NO were investigated by diffuse reflectance infrared Fourier transform (DRIFT) spectroscopy. No clear differences between the chemical states of the metal oxide surface exposed to NO2 or NO could be detected from the DRIFT spectra.http://www.mdpi.com/1424-8220/13/9/12467gas sensormetal oxide semiconductordiffuse reflectance infrared Fourier transform spectroscopyNO2NO
spellingShingle Woosuck Shin
Noriya Izu
Takafumi Akamatsu
Toshio Itoh
NO and NO2 Sensing Properties of WO3 and Co3O4 Based Gas Sensors
Sensors
gas sensor
metal oxide semiconductor
diffuse reflectance infrared Fourier transform spectroscopy
NO2
NO
title NO and NO2 Sensing Properties of WO3 and Co3O4 Based Gas Sensors
title_full NO and NO2 Sensing Properties of WO3 and Co3O4 Based Gas Sensors
title_fullStr NO and NO2 Sensing Properties of WO3 and Co3O4 Based Gas Sensors
title_full_unstemmed NO and NO2 Sensing Properties of WO3 and Co3O4 Based Gas Sensors
title_short NO and NO2 Sensing Properties of WO3 and Co3O4 Based Gas Sensors
title_sort no and no2 sensing properties of wo3 and co3o4 based gas sensors
topic gas sensor
metal oxide semiconductor
diffuse reflectance infrared Fourier transform spectroscopy
NO2
NO
url http://www.mdpi.com/1424-8220/13/9/12467
work_keys_str_mv AT woosuckshin noandno2sensingpropertiesofwo3andco3o4basedgassensors
AT noriyaizu noandno2sensingpropertiesofwo3andco3o4basedgassensors
AT takafumiakamatsu noandno2sensingpropertiesofwo3andco3o4basedgassensors
AT toshioitoh noandno2sensingpropertiesofwo3andco3o4basedgassensors