Resistive Switching Characteristics of Alloyed AlSiO<sub>x</sub> Insulator for Neuromorphic Devices

Resistive Switching Characteristics of Alloyed AlSiO<sub>x</sub> Insulator for Neuromorphic Devices

Charge-based memories, such as NAND flash and dynamic random-access memory (DRAM), have reached scaling limits and various next-generation memories are being studied to overcome their issues. Resistive random-access memory (RRAM) has advantages in structural scalability and long retention characteri...

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Bibliographic Details
Main Authors: Yunseok Lee, Jiung Jang, Beomki Jeon, Kisong Lee, Daewon Chung, Sungjun Kim
Format: Article
Language:English
Published: MDPI AG 2022-10-01
Series:Materials
Subjects:
neuromorphic system
memristor
resistive switching
alloyed materials
Online Access:https://www.mdpi.com/1996-1944/15/21/7520

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