Device modeling of two-steps oxygen anneal-based submicron InGaZnO back-end-of-line field-effect transistor enabling short-channel effects suppression
Abstract Amorphous oxide semiconductor (AOS) field-effect transistors (FETs) have been integrated with complementary metal-oxide-semiconductor (CMOS) circuitry in the back end of line (BEOL) CMOS process; they are promising devices creating new and various functionalities. Therefore, it is urgent to...
| Main Authors: | , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2022-11-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-022-23951-x |
| _version_ | 1797988475768668160 |
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| author | Donguk Kim Je-Hyuk Kim Woo Sik Choi Tae Jun Yang Jun Tae Jang Attilio Belmonte Nouredine Rassoul Subhali Subhechha Romain Delhougne Gouri Sankar Kar Wonsok Lee Min Hee Cho Daewon Ha Dae Hwan Kim |
| author_facet | Donguk Kim Je-Hyuk Kim Woo Sik Choi Tae Jun Yang Jun Tae Jang Attilio Belmonte Nouredine Rassoul Subhali Subhechha Romain Delhougne Gouri Sankar Kar Wonsok Lee Min Hee Cho Daewon Ha Dae Hwan Kim |
| author_sort | Donguk Kim |
| collection | DOAJ |
| description | Abstract Amorphous oxide semiconductor (AOS) field-effect transistors (FETs) have been integrated with complementary metal-oxide-semiconductor (CMOS) circuitry in the back end of line (BEOL) CMOS process; they are promising devices creating new and various functionalities. Therefore, it is urgent to understand the physics determining their scalability and establish a physics-based model for a robust device design of AOS BEOL FETs. However, the advantage emphasized to date has been mainly an ultralow leakage current of these devices. A device modeling that comprehensively optimizes the threshold voltage (V T), the short-channel effect (SCE), the subthreshold swing (SS), and the field-effect mobility (µFE) of short-channel AOS FETs has been rarely reported. In this study, the device modeling of two-steps oxygen anneal-based submicron indium-gallium-zinc-oxide (IGZO) BEOL FET enabling short-channel effects suppression is proposed and experimentally demonstrated. Both the process parameters determining the SCE and the device physics related to the SCE are elucidated through our modeling and a technology computer-aided design (TCAD) simulation. In addition, the procedure of extracting the model parameters is concretely supplied. Noticeably, the proposed device model and simulation framework reproduce all of the measured current–voltage (I–V), V T roll-off, and drain-induced barrier lowering (DIBL) characteristics according to the changes in the oxygen (O) partial pressure during the deposition of IGZO film, device structure, and channel length. Moreover, the results of an analysis based on the proposed model and the extracted parameters indicate that the SCE of submicron AOS FETs is effectively suppressed when the locally high oxygen-concentration region is used. Applying the two-step oxygen annealing to the double-gate (DG) FET can form this region, the beneficial effect of which is also proven through experimental results; the immunity to SCE is improved as the O-content controlled according to the partial O pressure during oxygen annealing increases. Furthermore, it is found that the essential factors in the device optimization are the subgap density of states (DOS), the oxygen content-dependent diffusion length of either the oxygen vacancy (V O) or O, and the separation between the top-gate edge and the source-drain contact hole. Our modeling and simulation results make it feasible to comprehensively optimize the device characteristic parameters, such as V T, SCE, SS, and µFE, of the submicron AOS BEOL FETs by independently controlling the lateral profile of the concentrations of V O and O in two-step oxygen anneal process. |
| first_indexed | 2024-04-11T08:03:29Z |
| format | Article |
| id | doaj.art-403e73d6d6654c688ba011d2cb313128 |
| institution | Directory Open Access Journal |
| issn | 2045-2322 |
| language | English |
| last_indexed | 2024-04-11T08:03:29Z |
| publishDate | 2022-11-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Scientific Reports |
| spelling | doaj.art-403e73d6d6654c688ba011d2cb3131282022-12-22T04:35:37ZengNature PortfolioScientific Reports2045-23222022-11-0112111310.1038/s41598-022-23951-xDevice modeling of two-steps oxygen anneal-based submicron InGaZnO back-end-of-line field-effect transistor enabling short-channel effects suppressionDonguk Kim0Je-Hyuk Kim1Woo Sik Choi2Tae Jun Yang3Jun Tae Jang4Attilio Belmonte5Nouredine Rassoul6Subhali Subhechha7Romain Delhougne8Gouri Sankar Kar9Wonsok Lee10Min Hee Cho11Daewon Ha12Dae Hwan Kim13School of Electrical Engineering, Kookmin UniversitySchool of Electrical Engineering, Kookmin UniversitySchool of Electrical Engineering, Kookmin UniversitySchool of Electrical Engineering, Kookmin UniversitySchool of Electrical Engineering, Kookmin UniversityimecimecimecimecimecAdvanced Device Research Lab, Semiconductor R&D Center, Samsung Electronics Co., Ltd.Advanced Device Research Lab, Semiconductor R&D Center, Samsung Electronics Co., Ltd.Advanced Device Research Lab, Semiconductor R&D Center, Samsung Electronics Co., Ltd.School of Electrical Engineering, Kookmin UniversityAbstract Amorphous oxide semiconductor (AOS) field-effect transistors (FETs) have been integrated with complementary metal-oxide-semiconductor (CMOS) circuitry in the back end of line (BEOL) CMOS process; they are promising devices creating new and various functionalities. Therefore, it is urgent to understand the physics determining their scalability and establish a physics-based model for a robust device design of AOS BEOL FETs. However, the advantage emphasized to date has been mainly an ultralow leakage current of these devices. A device modeling that comprehensively optimizes the threshold voltage (V T), the short-channel effect (SCE), the subthreshold swing (SS), and the field-effect mobility (µFE) of short-channel AOS FETs has been rarely reported. In this study, the device modeling of two-steps oxygen anneal-based submicron indium-gallium-zinc-oxide (IGZO) BEOL FET enabling short-channel effects suppression is proposed and experimentally demonstrated. Both the process parameters determining the SCE and the device physics related to the SCE are elucidated through our modeling and a technology computer-aided design (TCAD) simulation. In addition, the procedure of extracting the model parameters is concretely supplied. Noticeably, the proposed device model and simulation framework reproduce all of the measured current–voltage (I–V), V T roll-off, and drain-induced barrier lowering (DIBL) characteristics according to the changes in the oxygen (O) partial pressure during the deposition of IGZO film, device structure, and channel length. Moreover, the results of an analysis based on the proposed model and the extracted parameters indicate that the SCE of submicron AOS FETs is effectively suppressed when the locally high oxygen-concentration region is used. Applying the two-step oxygen annealing to the double-gate (DG) FET can form this region, the beneficial effect of which is also proven through experimental results; the immunity to SCE is improved as the O-content controlled according to the partial O pressure during oxygen annealing increases. Furthermore, it is found that the essential factors in the device optimization are the subgap density of states (DOS), the oxygen content-dependent diffusion length of either the oxygen vacancy (V O) or O, and the separation between the top-gate edge and the source-drain contact hole. Our modeling and simulation results make it feasible to comprehensively optimize the device characteristic parameters, such as V T, SCE, SS, and µFE, of the submicron AOS BEOL FETs by independently controlling the lateral profile of the concentrations of V O and O in two-step oxygen anneal process.https://doi.org/10.1038/s41598-022-23951-x |
| spellingShingle | Donguk Kim Je-Hyuk Kim Woo Sik Choi Tae Jun Yang Jun Tae Jang Attilio Belmonte Nouredine Rassoul Subhali Subhechha Romain Delhougne Gouri Sankar Kar Wonsok Lee Min Hee Cho Daewon Ha Dae Hwan Kim Device modeling of two-steps oxygen anneal-based submicron InGaZnO back-end-of-line field-effect transistor enabling short-channel effects suppression Scientific Reports |
| title | Device modeling of two-steps oxygen anneal-based submicron InGaZnO back-end-of-line field-effect transistor enabling short-channel effects suppression |
| title_full | Device modeling of two-steps oxygen anneal-based submicron InGaZnO back-end-of-line field-effect transistor enabling short-channel effects suppression |
| title_fullStr | Device modeling of two-steps oxygen anneal-based submicron InGaZnO back-end-of-line field-effect transistor enabling short-channel effects suppression |
| title_full_unstemmed | Device modeling of two-steps oxygen anneal-based submicron InGaZnO back-end-of-line field-effect transistor enabling short-channel effects suppression |
| title_short | Device modeling of two-steps oxygen anneal-based submicron InGaZnO back-end-of-line field-effect transistor enabling short-channel effects suppression |
| title_sort | device modeling of two steps oxygen anneal based submicron ingazno back end of line field effect transistor enabling short channel effects suppression |
| url | https://doi.org/10.1038/s41598-022-23951-x |
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