Optimal n-Type Al-Doped ZnO Overlayers for Charge Transport Enhancement in p-Type Cu<sub>2</sub>O Photocathodes

Optimal n-Type Al-Doped ZnO Overlayers for Charge Transport Enhancement in p-Type Cu<sub>2</sub>O Photocathodes

An effective strategy for improving the charge transport efficiency of p-type Cu<sub>2</sub>O photocathodes is the use of counter n-type semiconductors with a proper band alignment, preferably using Al-doped ZnO (AZO). Atomic layer deposition (ALD)-prepared AZO films show an increase in...

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Bibliographic Details
Main Authors: Hak Hyeon Lee, Dong Su Kim, Ji Hoon Choi, Young Been Kim, Sung Hyeon Jung, Swagotom Sarker, Nishad G. Deshpande, Hee Won Suh, Hyung Koun Cho
Format: Article
Language:English
Published: MDPI AG 2021-03-01
Series:Micromachines
Subjects:
photoelectrochemical
Cu<sub>2</sub>O
photocathodes
Al-doped ZnO
charge transport
ALD
Online Access:https://www.mdpi.com/2072-666X/12/3/338

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