Research Progress on Silicon Vacancy Color Centers in Diamond

The silicon vacancy (SiV) color centers in diamond have significant potential in the fields of quantum information, nanophotonics, bioimaging and sensing, due to its good structural stability at room temperature, strong photostability, short luminescence lifetime, narrow zero-phonon line bandwidth,...

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Main Authors: Chengke Chen, Bo Jiang, Xiaojun Hu
Format: Article
Language:English
Published: Taylor & Francis Group 2024-12-01
Series:Functional Diamond
Subjects:
Online Access:http://dx.doi.org/10.1080/26941112.2024.2332346
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author Chengke Chen
Bo Jiang
Xiaojun Hu
author_facet Chengke Chen
Bo Jiang
Xiaojun Hu
author_sort Chengke Chen
collection DOAJ
description The silicon vacancy (SiV) color centers in diamond have significant potential in the fields of quantum information, nanophotonics, bioimaging and sensing, due to its good structural stability at room temperature, strong photostability, short luminescence lifetime, narrow zero-phonon line bandwidth, and avoidance of biological autofluorescence. They have attracted extensive attention and in-depth research from researchers. The applications of SiV color centers in the above areas require addressing key issues such as control over the number and charge state of SiV color centers in diamond, as well as improving the luminous efficiency. Therefore, this review summarizes some recent relevant research progress, including common methods for preparing SiV color centers, control over their luminescence intensity, preparation of SiV single-photon sources, and research on the control of SiV color center charge states. Based on these, an outlook is provided for the preparation and application of SiV color centers in diamond.
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spelling doaj.art-4088e161054e484f99ba69f8efc9b50c2024-03-28T09:48:51ZengTaylor & Francis GroupFunctional Diamond2694-11202024-12-014110.1080/26941112.2024.23323462332346Research Progress on Silicon Vacancy Color Centers in DiamondChengke Chen0Bo Jiang1Xiaojun Hu2College of Materials Science and Engineering, Zhejiang University of TechnologyCollege of Materials Science and Engineering, Zhejiang University of TechnologyCollege of Materials Science and Engineering, Zhejiang University of TechnologyThe silicon vacancy (SiV) color centers in diamond have significant potential in the fields of quantum information, nanophotonics, bioimaging and sensing, due to its good structural stability at room temperature, strong photostability, short luminescence lifetime, narrow zero-phonon line bandwidth, and avoidance of biological autofluorescence. They have attracted extensive attention and in-depth research from researchers. The applications of SiV color centers in the above areas require addressing key issues such as control over the number and charge state of SiV color centers in diamond, as well as improving the luminous efficiency. Therefore, this review summarizes some recent relevant research progress, including common methods for preparing SiV color centers, control over their luminescence intensity, preparation of SiV single-photon sources, and research on the control of SiV color center charge states. Based on these, an outlook is provided for the preparation and application of SiV color centers in diamond.http://dx.doi.org/10.1080/26941112.2024.2332346diamondsiv color centersphotoluminescencecharge statesingle-photon source
spellingShingle Chengke Chen
Bo Jiang
Xiaojun Hu
Research Progress on Silicon Vacancy Color Centers in Diamond
Functional Diamond
diamond
siv color centers
photoluminescence
charge state
single-photon source
title Research Progress on Silicon Vacancy Color Centers in Diamond
title_full Research Progress on Silicon Vacancy Color Centers in Diamond
title_fullStr Research Progress on Silicon Vacancy Color Centers in Diamond
title_full_unstemmed Research Progress on Silicon Vacancy Color Centers in Diamond
title_short Research Progress on Silicon Vacancy Color Centers in Diamond
title_sort research progress on silicon vacancy color centers in diamond
topic diamond
siv color centers
photoluminescence
charge state
single-photon source
url http://dx.doi.org/10.1080/26941112.2024.2332346
work_keys_str_mv AT chengkechen researchprogressonsiliconvacancycolorcentersindiamond
AT bojiang researchprogressonsiliconvacancycolorcentersindiamond
AT xiaojunhu researchprogressonsiliconvacancycolorcentersindiamond