Simultaneous Extraction of the Grain Size, Single-Crystalline Grain Sheet Resistance, and Grain Boundary Resistivity of Polycrystalline Monolayer Graphene
The electrical properties of polycrystalline graphene grown by chemical vapor deposition (CVD) are determined by grain-related parameters—average grain size, single-crystalline grain sheet resistance, and grain boundary (GB) resistivity. However, extracting these parameters still remains challenging...
| Main Authors: | , , , , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-01-01
|
| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/12/2/206 |
| _version_ | 1797491462475087872 |
|---|---|
| author | Honghwi Park Junyeong Lee Chang-Ju Lee Jaewoon Kang Jiyeong Yun Hyowoong Noh Minsu Park Jonghyung Lee Youngjin Park Jonghoo Park Muhan Choi Sunghwan Lee Hongsik Park |
| author_facet | Honghwi Park Junyeong Lee Chang-Ju Lee Jaewoon Kang Jiyeong Yun Hyowoong Noh Minsu Park Jonghyung Lee Youngjin Park Jonghoo Park Muhan Choi Sunghwan Lee Hongsik Park |
| author_sort | Honghwi Park |
| collection | DOAJ |
| description | The electrical properties of polycrystalline graphene grown by chemical vapor deposition (CVD) are determined by grain-related parameters—average grain size, single-crystalline grain sheet resistance, and grain boundary (GB) resistivity. However, extracting these parameters still remains challenging because of the difficulty in observing graphene GBs and decoupling the grain sheet resistance and GB resistivity. In this work, we developed an electrical characterization method that can extract the average grain size, single-crystalline grain sheet resistance, and GB resistivity simultaneously. We observed that the material property, graphene sheet resistance, could depend on the device dimension and developed an analytical resistance model based on the cumulative distribution function of the gamma distribution, explaining the effect of the GB density and distribution in the graphene channel. We applied this model to CVD-grown monolayer graphene by characterizing transmission-line model patterns and simultaneously extracted the average grain size (~5.95 μm), single-crystalline grain sheet resistance (~321 Ω/sq), and GB resistivity (~18.16 kΩ-μm) of the CVD-graphene layer. The extracted values agreed well with those obtained from scanning electron microscopy images of ultraviolet/ozone-treated GBs and the electrical characterization of graphene devices with sub-micrometer channel lengths. |
| first_indexed | 2024-03-10T00:48:49Z |
| format | Article |
| id | doaj.art-40969692a5fc4ee989893558dd1af86d |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-10T00:48:49Z |
| publishDate | 2022-01-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-40969692a5fc4ee989893558dd1af86d2023-11-23T14:54:38ZengMDPI AGNanomaterials2079-49912022-01-0112220610.3390/nano12020206Simultaneous Extraction of the Grain Size, Single-Crystalline Grain Sheet Resistance, and Grain Boundary Resistivity of Polycrystalline Monolayer GrapheneHonghwi Park0Junyeong Lee1Chang-Ju Lee2Jaewoon Kang3Jiyeong Yun4Hyowoong Noh5Minsu Park6Jonghyung Lee7Youngjin Park8Jonghoo Park9Muhan Choi10Sunghwan Lee11Hongsik Park12School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, KoreaSchool of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, KoreaSchool of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, KoreaSchool of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, KoreaSchool of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, KoreaSchool of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, KoreaSchool of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, KoreaSchool of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, KoreaSchool of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, KoreaSchool of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, KoreaSchool of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, KoreaSchool of Engineering Technology, Purdue University, West Lafayette, IN 47907, USASchool of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, KoreaThe electrical properties of polycrystalline graphene grown by chemical vapor deposition (CVD) are determined by grain-related parameters—average grain size, single-crystalline grain sheet resistance, and grain boundary (GB) resistivity. However, extracting these parameters still remains challenging because of the difficulty in observing graphene GBs and decoupling the grain sheet resistance and GB resistivity. In this work, we developed an electrical characterization method that can extract the average grain size, single-crystalline grain sheet resistance, and GB resistivity simultaneously. We observed that the material property, graphene sheet resistance, could depend on the device dimension and developed an analytical resistance model based on the cumulative distribution function of the gamma distribution, explaining the effect of the GB density and distribution in the graphene channel. We applied this model to CVD-grown monolayer graphene by characterizing transmission-line model patterns and simultaneously extracted the average grain size (~5.95 μm), single-crystalline grain sheet resistance (~321 Ω/sq), and GB resistivity (~18.16 kΩ-μm) of the CVD-graphene layer. The extracted values agreed well with those obtained from scanning electron microscopy images of ultraviolet/ozone-treated GBs and the electrical characterization of graphene devices with sub-micrometer channel lengths.https://www.mdpi.com/2079-4991/12/2/206CVD graphenepolycrystallinegrain sizesingle-crystalline graingrain boundary (GB)GB distribution |
| spellingShingle | Honghwi Park Junyeong Lee Chang-Ju Lee Jaewoon Kang Jiyeong Yun Hyowoong Noh Minsu Park Jonghyung Lee Youngjin Park Jonghoo Park Muhan Choi Sunghwan Lee Hongsik Park Simultaneous Extraction of the Grain Size, Single-Crystalline Grain Sheet Resistance, and Grain Boundary Resistivity of Polycrystalline Monolayer Graphene Nanomaterials CVD graphene polycrystalline grain size single-crystalline grain grain boundary (GB) GB distribution |
| title | Simultaneous Extraction of the Grain Size, Single-Crystalline Grain Sheet Resistance, and Grain Boundary Resistivity of Polycrystalline Monolayer Graphene |
| title_full | Simultaneous Extraction of the Grain Size, Single-Crystalline Grain Sheet Resistance, and Grain Boundary Resistivity of Polycrystalline Monolayer Graphene |
| title_fullStr | Simultaneous Extraction of the Grain Size, Single-Crystalline Grain Sheet Resistance, and Grain Boundary Resistivity of Polycrystalline Monolayer Graphene |
| title_full_unstemmed | Simultaneous Extraction of the Grain Size, Single-Crystalline Grain Sheet Resistance, and Grain Boundary Resistivity of Polycrystalline Monolayer Graphene |
| title_short | Simultaneous Extraction of the Grain Size, Single-Crystalline Grain Sheet Resistance, and Grain Boundary Resistivity of Polycrystalline Monolayer Graphene |
| title_sort | simultaneous extraction of the grain size single crystalline grain sheet resistance and grain boundary resistivity of polycrystalline monolayer graphene |
| topic | CVD graphene polycrystalline grain size single-crystalline grain grain boundary (GB) GB distribution |
| url | https://www.mdpi.com/2079-4991/12/2/206 |
| work_keys_str_mv | AT honghwipark simultaneousextractionofthegrainsizesinglecrystallinegrainsheetresistanceandgrainboundaryresistivityofpolycrystallinemonolayergraphene AT junyeonglee simultaneousextractionofthegrainsizesinglecrystallinegrainsheetresistanceandgrainboundaryresistivityofpolycrystallinemonolayergraphene AT changjulee simultaneousextractionofthegrainsizesinglecrystallinegrainsheetresistanceandgrainboundaryresistivityofpolycrystallinemonolayergraphene AT jaewoonkang simultaneousextractionofthegrainsizesinglecrystallinegrainsheetresistanceandgrainboundaryresistivityofpolycrystallinemonolayergraphene AT jiyeongyun simultaneousextractionofthegrainsizesinglecrystallinegrainsheetresistanceandgrainboundaryresistivityofpolycrystallinemonolayergraphene AT hyowoongnoh simultaneousextractionofthegrainsizesinglecrystallinegrainsheetresistanceandgrainboundaryresistivityofpolycrystallinemonolayergraphene AT minsupark simultaneousextractionofthegrainsizesinglecrystallinegrainsheetresistanceandgrainboundaryresistivityofpolycrystallinemonolayergraphene AT jonghyunglee simultaneousextractionofthegrainsizesinglecrystallinegrainsheetresistanceandgrainboundaryresistivityofpolycrystallinemonolayergraphene AT youngjinpark simultaneousextractionofthegrainsizesinglecrystallinegrainsheetresistanceandgrainboundaryresistivityofpolycrystallinemonolayergraphene AT jonghoopark simultaneousextractionofthegrainsizesinglecrystallinegrainsheetresistanceandgrainboundaryresistivityofpolycrystallinemonolayergraphene AT muhanchoi simultaneousextractionofthegrainsizesinglecrystallinegrainsheetresistanceandgrainboundaryresistivityofpolycrystallinemonolayergraphene AT sunghwanlee simultaneousextractionofthegrainsizesinglecrystallinegrainsheetresistanceandgrainboundaryresistivityofpolycrystallinemonolayergraphene AT hongsikpark simultaneousextractionofthegrainsizesinglecrystallinegrainsheetresistanceandgrainboundaryresistivityofpolycrystallinemonolayergraphene |