Optical and Electronic Energy Band Properties of Nb-Doped β-Ga<sub>2</sub>O<sub>3</sub> Crystals
Systemic investigations are performed to comprehend the structural, optical, and electrical characteristics of four niobium (Nb) doped β-Ga<sub>2</sub>O<sub>3</sub> crystals (β-Ga<sub>2</sub>O<sub>3</sub>:Nb) grown by the optical floating zone (OFZ) me...
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MDPI AG
2021-01-01
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| Online Access: | https://www.mdpi.com/2073-4352/11/2/135 |
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| author | Xianjian Long Wenlong Niu Lingyu Wan Xian Chen Huiyuan Cui Qinglin Sai Changtai Xia Devki N. Talwar Zhechuan Feng |
| author_facet | Xianjian Long Wenlong Niu Lingyu Wan Xian Chen Huiyuan Cui Qinglin Sai Changtai Xia Devki N. Talwar Zhechuan Feng |
| author_sort | Xianjian Long |
| collection | DOAJ |
| description | Systemic investigations are performed to comprehend the structural, optical, and electrical characteristics of four niobium (Nb) doped β-Ga<sub>2</sub>O<sub>3</sub> crystals (β-Ga<sub>2</sub>O<sub>3</sub>:Nb) grown by the optical floating zone (OFZ) method. All of the β-Ga<sub>2</sub>O<sub>3</sub>:Nb crystals revealed monoclinic phases and good crystalline qualities. While the different Nb doped (i.e., 0.0001 mol%, 0.01 mol%, 0.1 mol% and 0.5 mol%) samples exhibited slightly changed bandgap energies E<sub>g</sub> (≡ 4.72 eV, 4.73 eV, 4.81 eV, 4.68 eV)—the luminescence features indicated distinctive defect levels—affecting the electronic energy structure significantly. By increasing the Nb doping level from 0.0001 mol% to 0.1 mol%, the Fermi level (E<sub>F</sub>) moves closer to the bottom of the conduction band. For the sample with Nb doping 0.5 mol%—no further improvement is noticed in the electronic properties. Finally, the energy band diagrams of four samples are given. |
| first_indexed | 2024-03-09T03:23:22Z |
| format | Article |
| id | doaj.art-409b940dd1b9479196e43b522524664a |
| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-03-09T03:23:22Z |
| publishDate | 2021-01-01 |
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| series | Crystals |
| spelling | doaj.art-409b940dd1b9479196e43b522524664a2023-12-03T15:05:10ZengMDPI AGCrystals2073-43522021-01-0111213510.3390/cryst11020135Optical and Electronic Energy Band Properties of Nb-Doped β-Ga<sub>2</sub>O<sub>3</sub> CrystalsXianjian Long0Wenlong Niu1Lingyu Wan2Xian Chen3Huiyuan Cui4Qinglin Sai5Changtai Xia6Devki N. Talwar7Zhechuan Feng8Center on NanoEnergy Research, Laboratory of Optoelectronic Materials & Detection Technology, Guangxi Key Laboratory for the Relativistic Astrophysics, School of Physical Science & Technology, Guangxi University, Nanning 530004, ChinaCenter on NanoEnergy Research, Laboratory of Optoelectronic Materials & Detection Technology, Guangxi Key Laboratory for the Relativistic Astrophysics, School of Physical Science & Technology, Guangxi University, Nanning 530004, ChinaCenter on NanoEnergy Research, Laboratory of Optoelectronic Materials & Detection Technology, Guangxi Key Laboratory for the Relativistic Astrophysics, School of Physical Science & Technology, Guangxi University, Nanning 530004, ChinaCenter on NanoEnergy Research, Laboratory of Optoelectronic Materials & Detection Technology, Guangxi Key Laboratory for the Relativistic Astrophysics, School of Physical Science & Technology, Guangxi University, Nanning 530004, ChinaKey Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, ChinaKey Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, ChinaKey Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, ChinaDepartment of Physics, University of North Florida, Jacksonville, FL 32224, USACenter on NanoEnergy Research, Laboratory of Optoelectronic Materials & Detection Technology, Guangxi Key Laboratory for the Relativistic Astrophysics, School of Physical Science & Technology, Guangxi University, Nanning 530004, ChinaSystemic investigations are performed to comprehend the structural, optical, and electrical characteristics of four niobium (Nb) doped β-Ga<sub>2</sub>O<sub>3</sub> crystals (β-Ga<sub>2</sub>O<sub>3</sub>:Nb) grown by the optical floating zone (OFZ) method. All of the β-Ga<sub>2</sub>O<sub>3</sub>:Nb crystals revealed monoclinic phases and good crystalline qualities. While the different Nb doped (i.e., 0.0001 mol%, 0.01 mol%, 0.1 mol% and 0.5 mol%) samples exhibited slightly changed bandgap energies E<sub>g</sub> (≡ 4.72 eV, 4.73 eV, 4.81 eV, 4.68 eV)—the luminescence features indicated distinctive defect levels—affecting the electronic energy structure significantly. By increasing the Nb doping level from 0.0001 mol% to 0.1 mol%, the Fermi level (E<sub>F</sub>) moves closer to the bottom of the conduction band. For the sample with Nb doping 0.5 mol%—no further improvement is noticed in the electronic properties. Finally, the energy band diagrams of four samples are given.https://www.mdpi.com/2073-4352/11/2/135β-Ga<sub>2</sub>O<sub>3</sub>:Nboptical floating zone methodoptical propertieselectronic energy band |
| spellingShingle | Xianjian Long Wenlong Niu Lingyu Wan Xian Chen Huiyuan Cui Qinglin Sai Changtai Xia Devki N. Talwar Zhechuan Feng Optical and Electronic Energy Band Properties of Nb-Doped β-Ga<sub>2</sub>O<sub>3</sub> Crystals Crystals β-Ga<sub>2</sub>O<sub>3</sub>:Nb optical floating zone method optical properties electronic energy band |
| title | Optical and Electronic Energy Band Properties of Nb-Doped β-Ga<sub>2</sub>O<sub>3</sub> Crystals |
| title_full | Optical and Electronic Energy Band Properties of Nb-Doped β-Ga<sub>2</sub>O<sub>3</sub> Crystals |
| title_fullStr | Optical and Electronic Energy Band Properties of Nb-Doped β-Ga<sub>2</sub>O<sub>3</sub> Crystals |
| title_full_unstemmed | Optical and Electronic Energy Band Properties of Nb-Doped β-Ga<sub>2</sub>O<sub>3</sub> Crystals |
| title_short | Optical and Electronic Energy Band Properties of Nb-Doped β-Ga<sub>2</sub>O<sub>3</sub> Crystals |
| title_sort | optical and electronic energy band properties of nb doped β ga sub 2 sub o sub 3 sub crystals |
| topic | β-Ga<sub>2</sub>O<sub>3</sub>:Nb optical floating zone method optical properties electronic energy band |
| url | https://www.mdpi.com/2073-4352/11/2/135 |
| work_keys_str_mv | AT xianjianlong opticalandelectronicenergybandpropertiesofnbdopedbgasub2subosub3subcrystals AT wenlongniu opticalandelectronicenergybandpropertiesofnbdopedbgasub2subosub3subcrystals AT lingyuwan opticalandelectronicenergybandpropertiesofnbdopedbgasub2subosub3subcrystals AT xianchen opticalandelectronicenergybandpropertiesofnbdopedbgasub2subosub3subcrystals AT huiyuancui opticalandelectronicenergybandpropertiesofnbdopedbgasub2subosub3subcrystals AT qinglinsai opticalandelectronicenergybandpropertiesofnbdopedbgasub2subosub3subcrystals AT changtaixia opticalandelectronicenergybandpropertiesofnbdopedbgasub2subosub3subcrystals AT devkintalwar opticalandelectronicenergybandpropertiesofnbdopedbgasub2subosub3subcrystals AT zhechuanfeng opticalandelectronicenergybandpropertiesofnbdopedbgasub2subosub3subcrystals |