Molecular beam epitaxial growth of Bi2Te3 and Sb2Te3 topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junction
High quality Bi2Te3 and Sb2Te3 topological insulators films were epitaxially grown on GaAs (111) substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111) substrates were investigated by reflection high-energy electron diffraction, atom...
| Main Authors: | , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2013-07-01
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| Series: | AIP Advances |
| Online Access: | http://link.aip.org/link/doi/10.1063/1.4815972 |
| _version_ | 1818481409049755648 |
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| author | Zhaoquan Zeng Timothy A. Morgan Dongsheng Fan Chen Li Yusuke Hirono Xian Hu Yanfei Zhao Joon Sue Lee Jian Wang Zhiming M. Wang Shuiqing Yu Michael E. Hawkridge Mourad Benamara Gregory J. Salamo |
| author_facet | Zhaoquan Zeng Timothy A. Morgan Dongsheng Fan Chen Li Yusuke Hirono Xian Hu Yanfei Zhao Joon Sue Lee Jian Wang Zhiming M. Wang Shuiqing Yu Michael E. Hawkridge Mourad Benamara Gregory J. Salamo |
| author_sort | Zhaoquan Zeng |
| collection | DOAJ |
| description | High quality Bi2Te3 and Sb2Te3 topological insulators films were epitaxially grown on GaAs (111) substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111) substrates were investigated by reflection high-energy electron diffraction, atomic force microscopy, X-ray diffraction, and high resolution transmission electron microscopy. It is found that non-vicinal GaAs (111) substrate is better than a vicinal substrate to provide high quality Bi2Te3 and Sb2Te3 films. Hall and magnetoresistance measurements indicate that p type Sb2Te3 and n type Bi2Te3 topological insulator films can be directly grown on a GaAs (111) substrate, which may pave a way to fabricate topological insulator p-n junction on the same substrate, compatible with the fabrication process of present semiconductor optoelectronic devices. |
| first_indexed | 2024-12-10T11:34:36Z |
| format | Article |
| id | doaj.art-40f45722c82f4c3f968f52227d755248 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-10T11:34:36Z |
| publishDate | 2013-07-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-40f45722c82f4c3f968f52227d7552482022-12-22T01:50:28ZengAIP Publishing LLCAIP Advances2158-32262013-07-013707211207211210.1063/1.4815972Molecular beam epitaxial growth of Bi2Te3 and Sb2Te3 topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junctionZhaoquan ZengTimothy A. MorganDongsheng FanChen LiYusuke HironoXian HuYanfei ZhaoJoon Sue LeeJian WangZhiming M. WangShuiqing YuMichael E. HawkridgeMourad BenamaraGregory J. SalamoHigh quality Bi2Te3 and Sb2Te3 topological insulators films were epitaxially grown on GaAs (111) substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111) substrates were investigated by reflection high-energy electron diffraction, atomic force microscopy, X-ray diffraction, and high resolution transmission electron microscopy. It is found that non-vicinal GaAs (111) substrate is better than a vicinal substrate to provide high quality Bi2Te3 and Sb2Te3 films. Hall and magnetoresistance measurements indicate that p type Sb2Te3 and n type Bi2Te3 topological insulator films can be directly grown on a GaAs (111) substrate, which may pave a way to fabricate topological insulator p-n junction on the same substrate, compatible with the fabrication process of present semiconductor optoelectronic devices.http://link.aip.org/link/doi/10.1063/1.4815972 |
| spellingShingle | Zhaoquan Zeng Timothy A. Morgan Dongsheng Fan Chen Li Yusuke Hirono Xian Hu Yanfei Zhao Joon Sue Lee Jian Wang Zhiming M. Wang Shuiqing Yu Michael E. Hawkridge Mourad Benamara Gregory J. Salamo Molecular beam epitaxial growth of Bi2Te3 and Sb2Te3 topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junction AIP Advances |
| title | Molecular beam epitaxial growth of Bi2Te3 and Sb2Te3 topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junction |
| title_full | Molecular beam epitaxial growth of Bi2Te3 and Sb2Te3 topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junction |
| title_fullStr | Molecular beam epitaxial growth of Bi2Te3 and Sb2Te3 topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junction |
| title_full_unstemmed | Molecular beam epitaxial growth of Bi2Te3 and Sb2Te3 topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junction |
| title_short | Molecular beam epitaxial growth of Bi2Te3 and Sb2Te3 topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junction |
| title_sort | molecular beam epitaxial growth of bi2te3 and sb2te3 topological insulators on gaas 111 substrates a potential route to fabricate topological insulator p n junction |
| url | http://link.aip.org/link/doi/10.1063/1.4815972 |
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