Effect of Growth Temperature on the Structural and Electrical Properties of ZrO2 Films Fabricated by Atomic Layer Deposition Using a CpZr[N(CH3)2]3/C7H8 Cocktail Precursor
The effect of growth temperature on the atomic layer deposition of zirconium oxide (ZrO2) dielectric thin films that were fabricated using a CpZr[N(CH3)2]3/C7H8 cocktail precursor with ozone was investigated. The chemical, structural, and electrical properties of ZrO2 films grown at temperatures fro...
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2018-03-01
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| Online Access: | http://www.mdpi.com/1996-1944/11/3/386 |
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| author | Jong-Ki An Nak-Kwan Chung Jin-Tae Kim Sung-Ho Hahm Geunsu Lee Sung Bo Lee Taehoon Lee In-Sung Park Ju-Young Yun |
| author_facet | Jong-Ki An Nak-Kwan Chung Jin-Tae Kim Sung-Ho Hahm Geunsu Lee Sung Bo Lee Taehoon Lee In-Sung Park Ju-Young Yun |
| author_sort | Jong-Ki An |
| collection | DOAJ |
| description | The effect of growth temperature on the atomic layer deposition of zirconium oxide (ZrO2) dielectric thin films that were fabricated using a CpZr[N(CH3)2]3/C7H8 cocktail precursor with ozone was investigated. The chemical, structural, and electrical properties of ZrO2 films grown at temperatures from 250 to 350 °C were characterized. Stoichiometric ZrO2 films formed at 250–350 °C with an atomic ratio of O to Zr of 1.8–1.9 and a low content of carbon impurities. The film formed at 300 °C was predominantly the tetragonal crystalline phase, whereas that formed at 350 °C was a mixture of tetragonal and monoclinic phases. Electrical properties, such as capacitance, leakage current, and voltage linearity of TiN/ZrO2/TiN capacitors fabricated using the thin ZrO2 films grown at different temperatures were compared capacitor applications. The ZrO2 film grown at 300 °C exhibited low impurity content, predominantly tetragonal crystalline structure, a high dielectric permittivity of 38.3, a low leakage current of below 10−7 A/cm2 at 2 V, and low-voltage linearity. |
| first_indexed | 2024-04-12T08:52:38Z |
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| id | doaj.art-41251df5c5a64a1eb8240736f5bd3905 |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-04-12T08:52:38Z |
| publishDate | 2018-03-01 |
| publisher | MDPI AG |
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| spelling | doaj.art-41251df5c5a64a1eb8240736f5bd39052022-12-22T03:39:32ZengMDPI AGMaterials1996-19442018-03-0111338610.3390/ma11030386ma11030386Effect of Growth Temperature on the Structural and Electrical Properties of ZrO2 Films Fabricated by Atomic Layer Deposition Using a CpZr[N(CH3)2]3/C7H8 Cocktail PrecursorJong-Ki An0Nak-Kwan Chung1Jin-Tae Kim2Sung-Ho Hahm3Geunsu Lee4Sung Bo Lee5Taehoon Lee6In-Sung Park7Ju-Young Yun8School of Electronics Engineering, Kyungpook National University, Daegu 41566, KoreaMaterials and Energy Measurement Center, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, KoreaMaterials and Energy Measurement Center, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, KoreaSchool of Electronics Engineering, Kyungpook National University, Daegu 41566, KoreaEugene Technology Materials, Gyeonggi-do 16675, KoreaDepartment of Materials Science and Engineering and Research Institute of Advanced Materials, Seoul National University, Seoul 08826, KoreaDivision of Materials Science and Engineering, Hanyang University, Seoul 04763, KoreaDivision of Materials Science and Engineering, Hanyang University, Seoul 04763, KoreaMaterials and Energy Measurement Center, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, KoreaThe effect of growth temperature on the atomic layer deposition of zirconium oxide (ZrO2) dielectric thin films that were fabricated using a CpZr[N(CH3)2]3/C7H8 cocktail precursor with ozone was investigated. The chemical, structural, and electrical properties of ZrO2 films grown at temperatures from 250 to 350 °C were characterized. Stoichiometric ZrO2 films formed at 250–350 °C with an atomic ratio of O to Zr of 1.8–1.9 and a low content of carbon impurities. The film formed at 300 °C was predominantly the tetragonal crystalline phase, whereas that formed at 350 °C was a mixture of tetragonal and monoclinic phases. Electrical properties, such as capacitance, leakage current, and voltage linearity of TiN/ZrO2/TiN capacitors fabricated using the thin ZrO2 films grown at different temperatures were compared capacitor applications. The ZrO2 film grown at 300 °C exhibited low impurity content, predominantly tetragonal crystalline structure, a high dielectric permittivity of 38.3, a low leakage current of below 10−7 A/cm2 at 2 V, and low-voltage linearity.http://www.mdpi.com/1996-1944/11/3/386cocktail precursoratomic layer depositionZrO2CpZr[N(CH3)2]3/C7H8capacitor |
| spellingShingle | Jong-Ki An Nak-Kwan Chung Jin-Tae Kim Sung-Ho Hahm Geunsu Lee Sung Bo Lee Taehoon Lee In-Sung Park Ju-Young Yun Effect of Growth Temperature on the Structural and Electrical Properties of ZrO2 Films Fabricated by Atomic Layer Deposition Using a CpZr[N(CH3)2]3/C7H8 Cocktail Precursor Materials cocktail precursor atomic layer deposition ZrO2 CpZr[N(CH3)2]3/C7H8 capacitor |
| title | Effect of Growth Temperature on the Structural and Electrical Properties of ZrO2 Films Fabricated by Atomic Layer Deposition Using a CpZr[N(CH3)2]3/C7H8 Cocktail Precursor |
| title_full | Effect of Growth Temperature on the Structural and Electrical Properties of ZrO2 Films Fabricated by Atomic Layer Deposition Using a CpZr[N(CH3)2]3/C7H8 Cocktail Precursor |
| title_fullStr | Effect of Growth Temperature on the Structural and Electrical Properties of ZrO2 Films Fabricated by Atomic Layer Deposition Using a CpZr[N(CH3)2]3/C7H8 Cocktail Precursor |
| title_full_unstemmed | Effect of Growth Temperature on the Structural and Electrical Properties of ZrO2 Films Fabricated by Atomic Layer Deposition Using a CpZr[N(CH3)2]3/C7H8 Cocktail Precursor |
| title_short | Effect of Growth Temperature on the Structural and Electrical Properties of ZrO2 Films Fabricated by Atomic Layer Deposition Using a CpZr[N(CH3)2]3/C7H8 Cocktail Precursor |
| title_sort | effect of growth temperature on the structural and electrical properties of zro2 films fabricated by atomic layer deposition using a cpzr n ch3 2 3 c7h8 cocktail precursor |
| topic | cocktail precursor atomic layer deposition ZrO2 CpZr[N(CH3)2]3/C7H8 capacitor |
| url | http://www.mdpi.com/1996-1944/11/3/386 |
| work_keys_str_mv | AT jongkian effectofgrowthtemperatureonthestructuralandelectricalpropertiesofzro2filmsfabricatedbyatomiclayerdepositionusingacpzrnch323c7h8cocktailprecursor AT nakkwanchung effectofgrowthtemperatureonthestructuralandelectricalpropertiesofzro2filmsfabricatedbyatomiclayerdepositionusingacpzrnch323c7h8cocktailprecursor AT jintaekim effectofgrowthtemperatureonthestructuralandelectricalpropertiesofzro2filmsfabricatedbyatomiclayerdepositionusingacpzrnch323c7h8cocktailprecursor AT sunghohahm effectofgrowthtemperatureonthestructuralandelectricalpropertiesofzro2filmsfabricatedbyatomiclayerdepositionusingacpzrnch323c7h8cocktailprecursor AT geunsulee effectofgrowthtemperatureonthestructuralandelectricalpropertiesofzro2filmsfabricatedbyatomiclayerdepositionusingacpzrnch323c7h8cocktailprecursor AT sungbolee effectofgrowthtemperatureonthestructuralandelectricalpropertiesofzro2filmsfabricatedbyatomiclayerdepositionusingacpzrnch323c7h8cocktailprecursor AT taehoonlee effectofgrowthtemperatureonthestructuralandelectricalpropertiesofzro2filmsfabricatedbyatomiclayerdepositionusingacpzrnch323c7h8cocktailprecursor AT insungpark effectofgrowthtemperatureonthestructuralandelectricalpropertiesofzro2filmsfabricatedbyatomiclayerdepositionusingacpzrnch323c7h8cocktailprecursor AT juyoungyun effectofgrowthtemperatureonthestructuralandelectricalpropertiesofzro2filmsfabricatedbyatomiclayerdepositionusingacpzrnch323c7h8cocktailprecursor |