Effect of Growth Temperature on the Structural and Electrical Properties of ZrO2 Films Fabricated by Atomic Layer Deposition Using a CpZr[N(CH3)2]3/C7H8 Cocktail Precursor

Effect of Growth Temperature on the Structural and Electrical Properties of ZrO2 Films Fabricated by Atomic Layer Deposition Using a CpZr[N(CH3)2]3/C7H8 Cocktail Precursor

The effect of growth temperature on the atomic layer deposition of zirconium oxide (ZrO2) dielectric thin films that were fabricated using a CpZr[N(CH3)2]3/C7H8 cocktail precursor with ozone was investigated. The chemical, structural, and electrical properties of ZrO2 films grown at temperatures fro...

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Bibliographic Details
Main Authors: Jong-Ki An, Nak-Kwan Chung, Jin-Tae Kim, Sung-Ho Hahm, Geunsu Lee, Sung Bo Lee, Taehoon Lee, In-Sung Park, Ju-Young Yun
Format: Article
Language:English
Published: MDPI AG 2018-03-01
Series:Materials
Subjects:
cocktail precursor
atomic layer deposition
ZrO2
CpZr[N(CH3)2]3/C7H8
capacitor
Online Access:http://www.mdpi.com/1996-1944/11/3/386

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