Effect of the Front and Back Illumination on Sub-Terahertz Detection Using n-Channel Strained-Silicon MODFETs
Plasma waves in semiconductor gated 2-D systems can be used to efficiently detect Terahertz (THz) electromagnetic radiation. This work reports on the response of a strained-Si Modulation-doped Field-Effect Transistor (MODFET) under front and back sub-THz illumination. The response of the MODFET has...
Main Authors: | Juan A. Delgado-Notario, Jaime Calvo-Gallego, Jesús E. Velázquez-Pérez, Miguel Ferrando-Bataller, Kristel Fobelets, Yahya M. Meziani |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2020-08-01
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Series: | Applied Sciences |
Subjects: | |
Online Access: | https://www.mdpi.com/2076-3417/10/17/5959 |
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