Photoelctrochemically Manufactured HgO/Cu2O Monolayer with Ameliorate Photovoltaic Features
This writing report acquaint the chances for promoting efficiency betterment of p-Cu2O electrode for PECs likewise in production of hydrogen gas, using HgO/Cu2O hetero-structure. The arrangement was accomplished by both bracing the surface of p-Cu2O plate embattled through thermal oxidization of cop...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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Physics Department, Faculty of Mathematics and Natural Sciences University of Jember
2022-11-01
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| Series: | Computational and Experimental Research in Materials and Renewable Energy |
| Online Access: | https://jurnal.unej.ac.id/index.php/CERiMRE/article/view/31858 |
| _version_ | 1811317681756831744 |
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| author | Muhammad Abdurrahman F. W. Burari O. W. Olasoji |
| author_facet | Muhammad Abdurrahman F. W. Burari O. W. Olasoji |
| author_sort | Muhammad Abdurrahman |
| collection | DOAJ |
| description | This writing report acquaint the chances for promoting efficiency betterment of p-Cu2O electrode for PECs likewise in production of hydrogen gas, using HgO/Cu2O hetero-structure. The arrangement was accomplished by both bracing the surface of p-Cu2O plate embattled through thermal oxidization of copper sheet and also acquiring low cost, effortless and low impairment engineering deposition for utilizing HgO as absorber layer. The altitudinous efficiency of 4.80% and open circuit voltage of 185MV were incurred in an HgO/Cu2O hetero-structure PEC solar cell commence with copper foil thickness (0.1mm) substrate for preparing the Cu2O thin film under oxygen gas pressure at 950℃ by thermal oxidizing techniques. It is requisite to augmented the interface at the hetero-structure junction to accomplished a soaring efficiency in HgO/Cu2O/HgO semiconductor beside multiplicative the parallel resistance and remittent the series resistance.
Keywords: thermal oxidation, cuprous oxide, hetero-structure, J-V characteristic, photoelectrochemical, annealing, etching. |
| first_indexed | 2024-04-13T12:12:33Z |
| format | Article |
| id | doaj.art-414029a252a449869997c45ce4df059f |
| institution | Directory Open Access Journal |
| issn | 2747-173X |
| language | English |
| last_indexed | 2024-04-13T12:12:33Z |
| publishDate | 2022-11-01 |
| publisher | Physics Department, Faculty of Mathematics and Natural Sciences University of Jember |
| record_format | Article |
| series | Computational and Experimental Research in Materials and Renewable Energy |
| spelling | doaj.art-414029a252a449869997c45ce4df059f2022-12-22T02:47:26ZengPhysics Department, Faculty of Mathematics and Natural Sciences University of JemberComputational and Experimental Research in Materials and Renewable Energy2747-173X2022-11-015214215110.19184/cerimre.v5i2.3185831858Photoelctrochemically Manufactured HgO/Cu2O Monolayer with Ameliorate Photovoltaic FeaturesMuhammad Abdurrahman0F. W. Burari1O. W. Olasoji2Department of Physics, Faculty of Natural Science, Federal University Dutse, Jigawa State, NigeriaDepartment of Physics, Faculty of Natural Science, Abubakar Tafawa Balewa University, Bauchi state, NigeriaDepartment of Physics, Faculty of Natural Science, Abubakar Tafawa Balewa University, Bauchi state, NigeriaThis writing report acquaint the chances for promoting efficiency betterment of p-Cu2O electrode for PECs likewise in production of hydrogen gas, using HgO/Cu2O hetero-structure. The arrangement was accomplished by both bracing the surface of p-Cu2O plate embattled through thermal oxidization of copper sheet and also acquiring low cost, effortless and low impairment engineering deposition for utilizing HgO as absorber layer. The altitudinous efficiency of 4.80% and open circuit voltage of 185MV were incurred in an HgO/Cu2O hetero-structure PEC solar cell commence with copper foil thickness (0.1mm) substrate for preparing the Cu2O thin film under oxygen gas pressure at 950℃ by thermal oxidizing techniques. It is requisite to augmented the interface at the hetero-structure junction to accomplished a soaring efficiency in HgO/Cu2O/HgO semiconductor beside multiplicative the parallel resistance and remittent the series resistance. Keywords: thermal oxidation, cuprous oxide, hetero-structure, J-V characteristic, photoelectrochemical, annealing, etching.https://jurnal.unej.ac.id/index.php/CERiMRE/article/view/31858 |
| spellingShingle | Muhammad Abdurrahman F. W. Burari O. W. Olasoji Photoelctrochemically Manufactured HgO/Cu2O Monolayer with Ameliorate Photovoltaic Features Computational and Experimental Research in Materials and Renewable Energy |
| title | Photoelctrochemically Manufactured HgO/Cu2O Monolayer with Ameliorate Photovoltaic Features |
| title_full | Photoelctrochemically Manufactured HgO/Cu2O Monolayer with Ameliorate Photovoltaic Features |
| title_fullStr | Photoelctrochemically Manufactured HgO/Cu2O Monolayer with Ameliorate Photovoltaic Features |
| title_full_unstemmed | Photoelctrochemically Manufactured HgO/Cu2O Monolayer with Ameliorate Photovoltaic Features |
| title_short | Photoelctrochemically Manufactured HgO/Cu2O Monolayer with Ameliorate Photovoltaic Features |
| title_sort | photoelctrochemically manufactured hgo cu2o monolayer with ameliorate photovoltaic features |
| url | https://jurnal.unej.ac.id/index.php/CERiMRE/article/view/31858 |
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