Atomic-scale manipulation of buried graphene–silicon carbide interface by local electric field
Abstract Precision of scanning tunneling microscopy (STM) enables control of matter at scales of single atoms. However, transition from atomic-scale manipulation strategies to practical devices encounters fundamental problems in protection of the designer structures formed atop the surface. In this...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2024-01-01
|
| Series: | Communications Physics |
| Online Access: | https://doi.org/10.1038/s42005-023-01515-3 |
| _version_ | 1797363222875996160 |
|---|---|
| author | Marek Kolmer Joseph Hall Shen Chen Samuel Roberts Zhe Fei Yong Han Michael C. Tringides |
| author_facet | Marek Kolmer Joseph Hall Shen Chen Samuel Roberts Zhe Fei Yong Han Michael C. Tringides |
| author_sort | Marek Kolmer |
| collection | DOAJ |
| description | Abstract Precision of scanning tunneling microscopy (STM) enables control of matter at scales of single atoms. However, transition from atomic-scale manipulation strategies to practical devices encounters fundamental problems in protection of the designer structures formed atop the surface. In this context, STM manipulation of subsurface structures on technologically relevant materials is encouraging. Here, we propose a material platform and protocols for precise manipulation of a buried graphene interface. We show that an electric field from the STM tip reversibly controls breaking and restoring of covalent bonds between the graphene buffer layer and the SiC substrate. The process involves charge redistribution at the atomically sharp interface plane under the epitaxial graphene layer(s). This buried manipulation platform is laterally defined by unit cells from the corresponding (6×6)SiC moiré lattice of the epitaxial graphene. Local and reversible electric-field-induced patterning of graphene heterostructures from the bottom interface creates an alternative architecture concept for their applications. |
| first_indexed | 2024-03-08T16:17:13Z |
| format | Article |
| id | doaj.art-4144c989f9b1455c8942c6eadc7f1522 |
| institution | Directory Open Access Journal |
| issn | 2399-3650 |
| language | English |
| last_indexed | 2024-03-08T16:17:13Z |
| publishDate | 2024-01-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Communications Physics |
| spelling | doaj.art-4144c989f9b1455c8942c6eadc7f15222024-01-07T12:29:29ZengNature PortfolioCommunications Physics2399-36502024-01-017111010.1038/s42005-023-01515-3Atomic-scale manipulation of buried graphene–silicon carbide interface by local electric fieldMarek Kolmer0Joseph Hall1Shen Chen2Samuel Roberts3Zhe Fei4Yong Han5Michael C. Tringides6Ames National Laboratory, U.S. Department of EnergyAmes National Laboratory, U.S. Department of EnergyAmes National Laboratory, U.S. Department of EnergyDepartment of Physics and Astronomy, Iowa State UniversityAmes National Laboratory, U.S. Department of EnergyAmes National Laboratory, U.S. Department of EnergyAmes National Laboratory, U.S. Department of EnergyAbstract Precision of scanning tunneling microscopy (STM) enables control of matter at scales of single atoms. However, transition from atomic-scale manipulation strategies to practical devices encounters fundamental problems in protection of the designer structures formed atop the surface. In this context, STM manipulation of subsurface structures on technologically relevant materials is encouraging. Here, we propose a material platform and protocols for precise manipulation of a buried graphene interface. We show that an electric field from the STM tip reversibly controls breaking and restoring of covalent bonds between the graphene buffer layer and the SiC substrate. The process involves charge redistribution at the atomically sharp interface plane under the epitaxial graphene layer(s). This buried manipulation platform is laterally defined by unit cells from the corresponding (6×6)SiC moiré lattice of the epitaxial graphene. Local and reversible electric-field-induced patterning of graphene heterostructures from the bottom interface creates an alternative architecture concept for their applications.https://doi.org/10.1038/s42005-023-01515-3 |
| spellingShingle | Marek Kolmer Joseph Hall Shen Chen Samuel Roberts Zhe Fei Yong Han Michael C. Tringides Atomic-scale manipulation of buried graphene–silicon carbide interface by local electric field Communications Physics |
| title | Atomic-scale manipulation of buried graphene–silicon carbide interface by local electric field |
| title_full | Atomic-scale manipulation of buried graphene–silicon carbide interface by local electric field |
| title_fullStr | Atomic-scale manipulation of buried graphene–silicon carbide interface by local electric field |
| title_full_unstemmed | Atomic-scale manipulation of buried graphene–silicon carbide interface by local electric field |
| title_short | Atomic-scale manipulation of buried graphene–silicon carbide interface by local electric field |
| title_sort | atomic scale manipulation of buried graphene silicon carbide interface by local electric field |
| url | https://doi.org/10.1038/s42005-023-01515-3 |
| work_keys_str_mv | AT marekkolmer atomicscalemanipulationofburiedgraphenesiliconcarbideinterfacebylocalelectricfield AT josephhall atomicscalemanipulationofburiedgraphenesiliconcarbideinterfacebylocalelectricfield AT shenchen atomicscalemanipulationofburiedgraphenesiliconcarbideinterfacebylocalelectricfield AT samuelroberts atomicscalemanipulationofburiedgraphenesiliconcarbideinterfacebylocalelectricfield AT zhefei atomicscalemanipulationofburiedgraphenesiliconcarbideinterfacebylocalelectricfield AT yonghan atomicscalemanipulationofburiedgraphenesiliconcarbideinterfacebylocalelectricfield AT michaelctringides atomicscalemanipulationofburiedgraphenesiliconcarbideinterfacebylocalelectricfield |