Self-Alignment of Bottom CZTSSe by Patterning of an Al<sub>2</sub>O<sub>3</sub> Intermediate Layer

Self-Alignment of Bottom CZTSSe by Patterning of an Al<sub>2</sub>O<sub>3</sub> Intermediate Layer

When CZTSSe is synthesized using a metal precursor, large voids of nonuniform size form at Mo back contact side. Herein, we demonstrate that the voids and CZTSSe in the lower part of the CZTSSe double layer can be controlled by using an Al<sub>2</sub>O<sub>3</sub>-patterned M...

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Bibliographic Details
Main Authors:	Sanghun Hong, Se-Yun Kim, Dae-Ho Son, Seung-Hyun Kim, Young-Ill Kim, Kee-Jeong Yang, Young-Woo Heo, Jin-Kyu Kang, Dae-Hwan Kim
Format:	Article
Language:	English
Published:	MDPI AG 2019-12-01
Series:	Nanomaterials
Subjects:	cztsse intermediate layer self-alignment wettability metal precursor two-step
Online Access:	https://www.mdpi.com/2079-4991/10/1/43

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