Ultra-wideband integrated photonic devices on silicon platform: from visible to mid-IR
Silicon photonics has gained great success mainly due to the promise of realizing compact devices in high volume through the low-cost foundry model. It is burgeoning from laboratory research into commercial production endeavors such as datacom and telecom. However, it is unsuitable for some emerging...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
De Gruyter
2023-01-01
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| Series: | Nanophotonics |
| Subjects: | |
| Online Access: | https://doi.org/10.1515/nanoph-2022-0575 |
| _version_ | 1797788999587201024 |
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| author | Guo Xuhan Ji Xingchen Yao Baicheng Tan Teng Chu Allen Westreich Ohad Dutt Avik Wong Cheewei Su Yikai |
| author_facet | Guo Xuhan Ji Xingchen Yao Baicheng Tan Teng Chu Allen Westreich Ohad Dutt Avik Wong Cheewei Su Yikai |
| author_sort | Guo Xuhan |
| collection | DOAJ |
| description | Silicon photonics has gained great success mainly due to the promise of realizing compact devices in high volume through the low-cost foundry model. It is burgeoning from laboratory research into commercial production endeavors such as datacom and telecom. However, it is unsuitable for some emerging applications which require coverage across the visible or mid infrared (mid-IR) wavelength bands. It is desirable to introduce other wideband materials through heterogeneous integration, while keeping the integration compatible with wafer-scale fabrication processes on silicon substrates. We discuss the properties of silicon-family materials including silicon, silicon nitride, and silica, and other non-group IV materials such as metal oxide, tantalum pentoxide, lithium niobate, aluminum nitride, gallium nitride, barium titanate, piezoelectric lead zirconate titanate, and 2D materials. Typical examples of devices using these materials on silicon platform are provided. We then introduce a general fabrication method and low-loss process treatment for photonic devices on the silicon platform. From an applications viewpoint, we focus on three new areas requiring integration: sensing, optical comb generation, and quantum information processing. Finally, we conclude with perspectives on how new materials and integration methods can address previously unattainable wavelength bands while maintaining the advantages of silicon, thus showing great potential for future widespread applications. |
| first_indexed | 2024-03-13T01:44:32Z |
| format | Article |
| id | doaj.art-4180b27dbb2043778265299eb037dbaf |
| institution | Directory Open Access Journal |
| issn | 2192-8614 |
| language | English |
| last_indexed | 2024-03-13T01:44:32Z |
| publishDate | 2023-01-01 |
| publisher | De Gruyter |
| record_format | Article |
| series | Nanophotonics |
| spelling | doaj.art-4180b27dbb2043778265299eb037dbaf2023-07-03T10:20:08ZengDe GruyterNanophotonics2192-86142023-01-0112216719610.1515/nanoph-2022-0575Ultra-wideband integrated photonic devices on silicon platform: from visible to mid-IRGuo Xuhan0Ji Xingchen1Yao Baicheng2Tan Teng3Chu Allen4Westreich Ohad5Dutt Avik6Wong Cheewei7Su Yikai8State Key Laboratory of Advanced Optical Communication Systems and Networks, Shanghai Jiao Tong University, Shanghai, ChinaJohn Hopcroft Center for Computer Science, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai200240, ChinaKey Laboratory of Optical Fibre Sensing and Communications (Education Ministry of China), University of Electronic Science and Technology of China, Chengdu, ChinaKey Laboratory of Optical Fibre Sensing and Communications (Education Ministry of China), University of Electronic Science and Technology of China, Chengdu, ChinaFang Lu Mesoscopic Optics and Quantum Electronics Laboratory, University of California, Los Angeles, CA, USAApplied Physics Division, Soreq NRC, Yavne 81800, IsraelMechanical Engineering, and Institute for Physical Science and Technology, University of Maryland, College Park, USAFang Lu Mesoscopic Optics and Quantum Electronics Laboratory, University of California, Los Angeles, CA, USAState Key Laboratory of Advanced Optical Communication Systems and Networks, Shanghai Jiao Tong University, Shanghai, ChinaSilicon photonics has gained great success mainly due to the promise of realizing compact devices in high volume through the low-cost foundry model. It is burgeoning from laboratory research into commercial production endeavors such as datacom and telecom. However, it is unsuitable for some emerging applications which require coverage across the visible or mid infrared (mid-IR) wavelength bands. It is desirable to introduce other wideband materials through heterogeneous integration, while keeping the integration compatible with wafer-scale fabrication processes on silicon substrates. We discuss the properties of silicon-family materials including silicon, silicon nitride, and silica, and other non-group IV materials such as metal oxide, tantalum pentoxide, lithium niobate, aluminum nitride, gallium nitride, barium titanate, piezoelectric lead zirconate titanate, and 2D materials. Typical examples of devices using these materials on silicon platform are provided. We then introduce a general fabrication method and low-loss process treatment for photonic devices on the silicon platform. From an applications viewpoint, we focus on three new areas requiring integration: sensing, optical comb generation, and quantum information processing. Finally, we conclude with perspectives on how new materials and integration methods can address previously unattainable wavelength bands while maintaining the advantages of silicon, thus showing great potential for future widespread applications.https://doi.org/10.1515/nanoph-2022-0575heterogeneous integrationmid infraredsilicon photonicsvisiblewide bandgap |
| spellingShingle | Guo Xuhan Ji Xingchen Yao Baicheng Tan Teng Chu Allen Westreich Ohad Dutt Avik Wong Cheewei Su Yikai Ultra-wideband integrated photonic devices on silicon platform: from visible to mid-IR Nanophotonics heterogeneous integration mid infrared silicon photonics visible wide bandgap |
| title | Ultra-wideband integrated photonic devices on silicon platform: from visible to mid-IR |
| title_full | Ultra-wideband integrated photonic devices on silicon platform: from visible to mid-IR |
| title_fullStr | Ultra-wideband integrated photonic devices on silicon platform: from visible to mid-IR |
| title_full_unstemmed | Ultra-wideband integrated photonic devices on silicon platform: from visible to mid-IR |
| title_short | Ultra-wideband integrated photonic devices on silicon platform: from visible to mid-IR |
| title_sort | ultra wideband integrated photonic devices on silicon platform from visible to mid ir |
| topic | heterogeneous integration mid infrared silicon photonics visible wide bandgap |
| url | https://doi.org/10.1515/nanoph-2022-0575 |
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