Growth of highly conducting MoS2-xNx thin films with enhanced 1T' phase by pulsed laser deposition and exploration of their nanogenerator application
Summary: High-quality growth of MoS2-xNx films is realized on single-crystal c-Al2O3 substrates by the pulsed laser deposition (PLD) in ammonia rendering highly stable and tunable 1Tʹ/2H biphasic constitution. Raman spectroscopy reveals systematic enhancement of 1Tʹ phase component due to the incorp...
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| Format: | Article |
| Language: | English |
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Elsevier
2022-03-01
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| Series: | iScience |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2589004222001687 |
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| author | Swati Parmar Neetu Prajesh Minal Wable Ram Janay Choudhary Suresh Gosavi Ramamoorthy Boomishankar Satishchandra Ogale |
| author_facet | Swati Parmar Neetu Prajesh Minal Wable Ram Janay Choudhary Suresh Gosavi Ramamoorthy Boomishankar Satishchandra Ogale |
| author_sort | Swati Parmar |
| collection | DOAJ |
| description | Summary: High-quality growth of MoS2-xNx films is realized on single-crystal c-Al2O3 substrates by the pulsed laser deposition (PLD) in ammonia rendering highly stable and tunable 1Tʹ/2H biphasic constitution. Raman spectroscopy reveals systematic enhancement of 1Tʹ phase component due to the incorporation of covalently bonded N-doping in MoS2 lattice, inducing compressive strain. Interestingly, the film deposited at 300 mTorr NH3 shows ∼80% 1Tʹ phase. The transport measurements performed on MoS2-xNx films deposited at 300 mTorr NH3 display very low room temperature resistivity of 0.03 mΩ-cm which is 100 times enhanced over the undoped MoS2 grown under comparable conditions. A triboelectric nanogenerator (TENG) device containing biphasic MoS2-xNx film as an electron acceptor exhibits a clear enhancement in the output voltage as compared to the pristine MoS2. Device architecture, p-type N doping in MoS2 lattice, favorably increased work-function, multiphasic component of MoS2, and increased surface roughness synergistically contribute to superior TENG performance. |
| first_indexed | 2024-12-20T18:53:05Z |
| format | Article |
| id | doaj.art-41a9705969244df4bbb3fbb4fda3a95b |
| institution | Directory Open Access Journal |
| issn | 2589-0042 |
| language | English |
| last_indexed | 2024-12-20T18:53:05Z |
| publishDate | 2022-03-01 |
| publisher | Elsevier |
| record_format | Article |
| series | iScience |
| spelling | doaj.art-41a9705969244df4bbb3fbb4fda3a95b2022-12-21T19:29:34ZengElsevieriScience2589-00422022-03-01253103898Growth of highly conducting MoS2-xNx thin films with enhanced 1T' phase by pulsed laser deposition and exploration of their nanogenerator applicationSwati Parmar0Neetu Prajesh1Minal Wable2Ram Janay Choudhary3Suresh Gosavi4Ramamoorthy Boomishankar5Satishchandra Ogale6Department of Physics and Centre for Energy Science, Indian Institute of Science Education and Research (IISER), Pune, Maharashtra 411008, IndiaDepartment of Chemistry and Centre for Energy Science, Indian Institute of Science Education and Research (IISER), Pune, Maharashtra 411008, IndiaDepartment of Physics and Centre for Energy Science, Indian Institute of Science Education and Research (IISER), Pune, Maharashtra 411008, IndiaUGC-DAE Consortium for Scientific Research, Indore 452001, IndiaDepartment of Physics, Savitribai Phule Pune University, Pune, Maharashtra 411007, IndiaDepartment of Chemistry and Centre for Energy Science, Indian Institute of Science Education and Research (IISER), Pune, Maharashtra 411008, India; Corresponding authorDepartment of Physics and Centre for Energy Science, Indian Institute of Science Education and Research (IISER), Pune, Maharashtra 411008, India; Research Institute for Sustainable Energy (RISE), TCG Centre for Research and Education in Science and Technology (TCG-CREST), Kolkata 700091, India; Corresponding authorSummary: High-quality growth of MoS2-xNx films is realized on single-crystal c-Al2O3 substrates by the pulsed laser deposition (PLD) in ammonia rendering highly stable and tunable 1Tʹ/2H biphasic constitution. Raman spectroscopy reveals systematic enhancement of 1Tʹ phase component due to the incorporation of covalently bonded N-doping in MoS2 lattice, inducing compressive strain. Interestingly, the film deposited at 300 mTorr NH3 shows ∼80% 1Tʹ phase. The transport measurements performed on MoS2-xNx films deposited at 300 mTorr NH3 display very low room temperature resistivity of 0.03 mΩ-cm which is 100 times enhanced over the undoped MoS2 grown under comparable conditions. A triboelectric nanogenerator (TENG) device containing biphasic MoS2-xNx film as an electron acceptor exhibits a clear enhancement in the output voltage as compared to the pristine MoS2. Device architecture, p-type N doping in MoS2 lattice, favorably increased work-function, multiphasic component of MoS2, and increased surface roughness synergistically contribute to superior TENG performance.http://www.sciencedirect.com/science/article/pii/S2589004222001687Materials scienceMaterials synthesisNanomaterials |
| spellingShingle | Swati Parmar Neetu Prajesh Minal Wable Ram Janay Choudhary Suresh Gosavi Ramamoorthy Boomishankar Satishchandra Ogale Growth of highly conducting MoS2-xNx thin films with enhanced 1T' phase by pulsed laser deposition and exploration of their nanogenerator application iScience Materials science Materials synthesis Nanomaterials |
| title | Growth of highly conducting MoS2-xNx thin films with enhanced 1T' phase by pulsed laser deposition and exploration of their nanogenerator application |
| title_full | Growth of highly conducting MoS2-xNx thin films with enhanced 1T' phase by pulsed laser deposition and exploration of their nanogenerator application |
| title_fullStr | Growth of highly conducting MoS2-xNx thin films with enhanced 1T' phase by pulsed laser deposition and exploration of their nanogenerator application |
| title_full_unstemmed | Growth of highly conducting MoS2-xNx thin films with enhanced 1T' phase by pulsed laser deposition and exploration of their nanogenerator application |
| title_short | Growth of highly conducting MoS2-xNx thin films with enhanced 1T' phase by pulsed laser deposition and exploration of their nanogenerator application |
| title_sort | growth of highly conducting mos2 xnx thin films with enhanced 1t phase by pulsed laser deposition and exploration of their nanogenerator application |
| topic | Materials science Materials synthesis Nanomaterials |
| url | http://www.sciencedirect.com/science/article/pii/S2589004222001687 |
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