Variations in Minority Carrier-Trapping Effects Caused by Hydrogen Passivation in Multicrystalline Silicon Wafer

Variations in Minority Carrier-Trapping Effects Caused by Hydrogen Passivation in Multicrystalline Silicon Wafer

In a multicrystalline silicon (mc-Si) wafer, trapping effects frequently occur in the carrier lifetime measurement based on the quasi-steady-state photoconductance (QSSPC) technique. This affects the accurate measurement of the carrier lifetime of an mc-Si solar cell by causing distortions at a low...

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Bibliographic Details
Main Authors: Yujin Jung, Kwan Hong Min, Soohyun Bae, Yoonmook Kang, Donghwan Kim, Hae-Seok Lee
Format: Article
Language:English
Published: MDPI AG 2020-11-01
Series:Energies
Subjects:
multicrystalline silicon
trapping effect
photoconductance
grain boundary
hydrogen passivation
Online Access:https://www.mdpi.com/1996-1073/13/21/5783

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