Selective Wet-Etching of Polymer/Fullerene Blend Films for Surface- and Nanoscale Morphology-Controlled Organic Transistors and Sensitivity-Enhanced Gas Sensors

Surface and nanoscale morphology of thin poly(3-hexylthiophene) (P3HT) films are effectively controlled by blending the polymer with a soluble derivative of fullerene, and then selectively dissolving out the fullerene from the blend films. A combination of the polymer blending with fullerene and a u...

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Bibliographic Details
Main Authors: Min Soo Park, Alem Araya Meresa, Chan-Min Kwon, Felix Sunjoo Kim
Format: Article
Language:English
Published: MDPI AG 2019-10-01
Series:Polymers
Subjects:
Online Access:https://www.mdpi.com/2073-4360/11/10/1682
Description
Summary:Surface and nanoscale morphology of thin poly(3-hexylthiophene) (P3HT) films are effectively controlled by blending the polymer with a soluble derivative of fullerene, and then selectively dissolving out the fullerene from the blend films. A combination of the polymer blending with fullerene and a use of diiodooctane (DIO) as a processing additive enhances the molecular ordering of P3HT through nanoscale phase separation, compared to the pristine P3HT. In organic thin-film transistors, such morphological changes in the blend induce a positive effect on the field-effect mobility, as the mobility is ~5−7 times higher than in the pristine P3HT. Simple dipping of the blend films in butyl acetate (BA) causes a selective dissolution of the small molecular component, resulting in a rough surface with nanoscale features of P3HT films. Chemical sensors utilizing these morphological features show an enhanced sensitivity in detection of gas-phase ammonia, water, and ethanol.
ISSN:2073-4360